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nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

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Contributor(s) Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
Purdue University, West Lafayette
Abstract A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that dramatically lowers the computational burden and permits use as a design tool. Also implemented for comparison are a ballistic solution of the Boltzmann Transport Equation and the drift-diffusion approaches. The program is described and some examples of the use of nanoMOS for 10nm double gate MOSFETs are presented.
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If you reference this work in a publication, please cite as follows:

    Z. Ren, R. Venugopal, S. Goasguen, S. Datta and M. S. Lundstrom, "nanoMOS 2.5: A Two-Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs," IEEE Trans. Electron. Dev., special issue on Nanoelectronics, 50, 1914-1925, 2003.

  • Ren, Zhibin; Venugopal, Ramesh; Goasguen, Sebastien; Datta, Supriyo; Lundstrom, Mark (2006), "nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs," http://www.nanohub.org/resources/1875/.

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Date posted 06 Oct, 2006
Type Publications
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