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Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

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Contributor(s) Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal
Purdue University, West Lafayette

D. Jovanovic
Computational Materials Group, Motorola Labs
Abstract In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation, is based on an expansion of the active device Hamiltonian in decoupled mode-space. Simulation results from this method are benchmarked against solutions from a rigorous two-dimensional discretization of the device Hamiltonian in real-space. While doing so, the inherent approximations, regime of va- lidity and the computational efficiency of the mode-space solution are highlighted and discussed. Additionally, quantum boundary conditions are rigorously derived and the effects of strong off- equilibrium transport are examined. This paper shows that the decoupled mode-space solution is an efficient and accurate simulation method for modeling electron transport in nanoscale, silicon- on-insulator transistors.
Cite this work

If you reference this work in a publication, please cite as follows:

    R. Venugopal, Z. Ren, S. Datta, and M. S. Lundstrom, "Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approach," J. Appl. Phys., 92, 3730-3739, 2002.

  • Ren, Zhibin; Datta, Supriyo; Lundstrom, Mark; Venugopal, Ramesh; Jovanovic, D. (2006), "Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches," http://www.nanohub.org/resources/1835/.

    BibTex | EndNote

Date posted 28 Sep, 2006
Type Publications
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