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ECE 612 Nanoscale Transistors

ECE 612 Lecture 5: Poly Si Gate MOS Capacitors

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Last 12 Months: updated 01 Aug, 2008
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Contributor(s) Mark Lundstrom
Purdue University, West Lafayette
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  • Lundstrom, Mark (2006), "ECE 612 Lecture 5: Poly Si Gate MOS Capacitors," http://www.nanohub.org/resources/1767/.

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Date posted 08 Sep, 2006
Time 02:30 PM, August 30, 2006
Location EE Building, Room 117
Type Online Presentations
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  • 9.8 Ranking Courses Part of: ECE 612 Nanoscale Transistors

    ECE 612 Nanoscale Transistors

    Type Courses
    Contributor(s) Mark Lundstrom
    Date 08 Aug, 2006
    Avg. Rating 5.0 out of 5 stars  (16)
    Rate this

    This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.

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