ECE 612 Nanoscale Transistors (Fall 2006)

By Mark Lundstrom

Purdue University

 

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Lecture Number/Topic Online Lecture Video Lecture Notes Supplemental Material Suggested Exercises
ECE 612 Introductory Lecture (Fall 06) View Flash ece612-f06 introduction.pdf
ECE 612 Lecture 1: MOSFET Review View Flash ece612-l01 mosfet review.pdf
ECE 612 Lecture 2: Introduction to Device Simulation View Flash ece612-l02 device simulation.pdf
ECE 612 Lecture 3: 1D MOS Electrostatics View Flash ece612-l03 1d mos electrostatics.pdf
ECE 612 Lecture 4: MOS Capacitors View Flash ECE 612 Lecture 4: MOS Capacitors
ECE 612 Lecture 5: Poly Si Gate MOS Capacitors View Flash ECE 612 Lecture 5: Poly Si Gate MOS Capacitors
ECE 612 Lecture 6: Quantum Mechanical Effects View Flash ECE 612 Lecture 6: Quantum Mechanical Effects
ECE 612 Lecture 7: MOSFET IV, Part I View Flash ECE 612 Lecture 7: MOSFET IV, Part I
ECE 612 Lecture 8: MOSFET IV, Part II View Flash ECE 612 Lecture 8: MOSFET IV, Part II
ECE 612 Lecture 9: MOSFET IV, Part III View Flash ECE 612 Lecture 9: MOSFET IV, Part III
ECE 612 Lecture 10: The Ballistic MOSFET View Flash ECE 612 Lecture 10: The Ballistic MOSFET
ECE 612 Lecture 11: The Quasi-ballistic MOSFET View Flash ECE 612 Lecture 11: The Quasi-ballistic MOSFET
ECE 612 Lecture 12: Subthreshold Conduction View Flash ECE 612 Lecture 12: Subthreshold Conduction
ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances View Flash ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
ECE 612 Lecture 14: Effective Mobility View Flash ECE 612 Lecture 14: Effective Mobility
ECE 612 Lecture 15: 2D Electrostatics, Part I View Flash ECE 612 Lecture 15: 2D Electrostatics, Part I
ECE 612 Lecture 16: 2D Electrostatics, Part II View Flash ECE 612 Lecture 16: 2D Electrostatics, Part II
The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective View Flash View The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...

ECE 612 Lecture 17: Device Scaling View Flash ECE 612 Lecture 17: Device Scaling
ECE 612 Lecture 18: VT Engineering View Flash ECE 612 Lecture 18: VT Engineering
ECE 612 Lecture 19: Series Resistance View Flash ECE 612 Lecture 19: Series Resistance
ECE 612 Lecture 20: MOSFET Leakage View Flash ECE 612 Lecture 20: MOSFET Leakage
ECE 612 Lecture 21: Gate resistance and Interconnects View Flash ECE 612 Lecture 21: Gate resistance and Interconnects
ECE 612 Lecture 22: CMOS Process Steps View Flash ECE 612 Lecture 22: CMOS Process Steps
ECE 612 Lecture 23: CMOS Process Flow View Flash ECE 612 Lecture 23: CMOS Process Flow
ECE 612 Lecture 24: CMOS Circuits, Part I View Flash ECE 612 Lecture 24: CMOS Circuits, Part I
ECE 612 Lecture 25: CMOS Circuits, Part I I View Flash ECE 612 Lecture 25: CMOS Circuits, Part I I
ECE 612 Lecture 26: CMOS Limits View Flash ECE 612 Lecture 26: CMOS Limits
ECE 612 Lecture 27: RF CMOS View Flash ECE 612 Lecture 27: RF CMOS
ECE 612 Lecture 28: Overview of SOI Technology View Flash ECE 612 Lecture 28: Overview of SOI Technology
ECE 612 Lecture 29: SOI Electrostatics View Flash ECE 612 Lecture 29: SOI Electrostatics
ECE 612 Lecture 30: UTB SOI Electrostatics View Flash ECE 612 Lecture 30: UTB SOI Electrostatics
ECE 612 Lecture 31: Heterostructure Fundamentals View Flash ECE 612 Lecture 31: Heterostructure Fundamentals
ECE 612 Lecture 32: Heterojunction Diodes View Flash ECE 612 Lecture 32: Heterojunction Diodes
ECE 612 Lecture 33: Heterojunction Bipolar Transistors View Flash ECE 612 Lecture 33: Heterojunction Bipolar Transistors
ECE 612 Lecture 34: Heterostructure FETs View Flash ECE 612 Lecture 34: Heterostructure FETs