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CGTB

This resource has a 6.7 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Overall Period: Updated 21 Aug, 2008
Users: 172
Jobs: 452
Avg. exec. time: 42 secs
Reviews & Citations
Google/IEEE
Avg. Review: 5.0 out of 5 stars
Citations: 0

172 users, detailed statistics

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  • 1 (published)
Version 1 - published on 16 Jun, 2006
Contributor(s) Yang Xu, Narayan Aluru
University of Illinois, Urbana-Champaign
At a glance Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model
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Description

CGTB is an interactive tool for computing the charge density distribution and potential variation inside a MOS structure. A full tight binding description of the silicon atoms is coarse-grained to a 1-D tight binding description by using the periodicity of the electronic properties in the planes parallel to the dielectric layer. In the CGTB rapture tool, the user can specify the applied potential on the metal layer and the gap of between the silicon structure and the metal layer (i.e., the thickness of the dielectric layer). The charge density and potential profiles in the MOS structure are computed and plotted.

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Credits This work was supported by the National Science Foundation.
Cite this work

If you reference this work in a publication, please cite as follows:

  • Xu, Yang; Aluru, Narayan (2006), "CGTB," doi: 10254/nanohub-r1586.1.

    BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

  • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org
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  1. 5.0 out of 5 stars 

    Posted on 12 July, 2007 by yang xu

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