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NanoMOS 3.0 First Time User's Guide

This resource has a 8.0 Ranking

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Last 12 Months: updated 01 Jul, 2008
Users: 120
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Avg. Review: 0.0 out of 5 stars
Citations: 0

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Supporting Documents

Licensed under Creative Commons according to this deed.

Contributor(s) Kurtis Cantley
University of Texas at Dallas

Mark Lundstrom
Purdue University, West Lafayette
Abstract This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the user understand the capabilities of the tool. These examples include semiclassical and NEGF simulations of thin-body double-gated n-MOSFETs, with local density of states and I-V characteristic outputs.
Cite this work

If you reference this work in a publication, please cite as follows:

  • Cantley, Kurtis; Lundstrom, Mark (2006), "NanoMOS 3.0 First Time User's Guide," http://www.nanohub.org/resources/1533/.

    BibTex | EndNote

Date posted 06 Jun, 2006
Time June 01, 2006
Type Online Presentations
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