Sending report ...Quantum Mechanics: Periodic Potentials and Kronig-Penney Model
Band Structure Lab
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Usage Stats Overall Period: Updated 21 Nov, 2008 Users: 1994 Jobs: 15120 Avg. exec. time: 8 mins Reviews & Citations Google/IEEE: updated 15 Apr, 2008 Avg. Review: Citations: 7
1994 users, detailed statistics
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Available Versions
- 2.0.2 (published)
- 2.0.1 (unpublished)
- 2.0 (unpublished)
- 1.2 (published)
- 1.0 (unpublished)
- More...
| Version | 2.0.2 - published on 26 Sep, 2008 | ||||||||||||||
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| Contributor(s) | Abhijeet Paul, Mathieu Luisier, Neophytos Neophytou, Raseong Kim, Michael McLennan, Mark Lundstrom, Gerhard Klimeck Purdue University, West Lafayette |
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| At a glance | Computes the electronic structure of various materials in the spatial configuration of bulk (infinitely periodic), quantum wells (confined in one dimension, infinitely periodic in 2 dimensions), and wires (confined in 2 dimensions and infinitely periodic i | ||||||||||||||
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| Description | Bandstructure Lab uses the sp3s*d5 tight binding method to compute E(k) for bulk, planar, and nanowire semiconductors. Using this tool, you can quickly compute and visualize the bandstructures of bulk semiconductors, thin films, and nanowires for various materials, growth orientations, and strain conditions. Physical parameters such as the bandgap and effective mass can also be obtained from the computed E(k). The bandedges and effective masses of the bulk materials and the nanostructures structures can be analyzed as a function of various strain conditions.
As explained in a related seminar, correct band structure is essential for modeling devices at the nano scale.
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| Powered by | OMEN |
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| Credits | Bandstructure Lab is based on the tight binding model of Boykin and Klimeck, and builds on the work of several Ph.D. students and other researchers:
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| Sponsored by | NCN@Purdue, MSD FCRP, SRC |
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| Cite this work | If you reference this work in a publication, please cite as follows:
In addition, we would appreciate it if you would add the following acknowledgment to your publication:
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| Type | Tools | ||||||||||||||
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Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
Affiliated authors
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Neophytou, N.; Paul, A.; Lundstrom, M.S.; Klimeck, G. (2008), "Bandstructure Effects in Silicon Nanowire Electron Transport," Electron Devices, IEEE Transactions on, 55, 6: pg. 1286-1297, 06. 0018-9383. (DOI: 10.1109/TED.2008.920233).
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Liu, Y.; Neophytou, N.; Low, T.; Klimeck, G.; Lundstrom, M.S. (2008), "A Tight-Binding study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs," Electron Devices, IEEE Transactions on, 55, 3: pg. 866-871, 03. 0018-9383. (DOI: 10.1109/TED.2007.915056).
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Neophytou, N.; Paul, A.; Lundstrom, M.S.; Klimeck, G. (2007), "Simulations of Nanowire Transistors: Atomic vs. Effective Mass Models," Journal of Computational Electronics.
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Neophytou, N.; Paul, A.; Lundstrom, M.S.; Klimeck, G. (2007), "Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets," Simulation of Semiconductor Processes and Devices, 12: pg. 217-220, 09.
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Klimeck, G. (2007), "NanoHUB.org Tutorial: Education Simulation Tools," Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on: pg. nil41-nil41, 01. 1-4244-0610-2. (DOI: 10.1109/NEMS.2007.351992).
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Rahman, A.; Klimeck, G.; Lundstrom, M.S. (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects," Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International: pg. 4, 12.
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Wang, J.; Rahman, A.; Ghosh, A.W.; Klimeck, G.; Lundstrom, M.S. (2005), "On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors," IEEE Transactions on Electron Devices, 52, 7: pg. 1589-1595, 07. 1557-9646. (DOI: 10.1109/TED.2005.850945).
Neophytou, N.; Paul, A.; Lundstrom, M.S.; Klimeck, G. (2008), "Bandstructure Effects in Silicon Nanowire Electron Transport," Electron Devices, IEEE Transactions on, 55, 6: pg. 1286-1297, 06. 0018-9383. (DOI: 10.1109/TED.2008.920233).
Liu, Y.; Neophytou, N.; Low, T.; Klimeck, G.; Lundstrom, M.S. (2008), "A Tight-Binding study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs," Electron Devices, IEEE Transactions on, 55, 3: pg. 866-871, 03. 0018-9383. (DOI: 10.1109/TED.2007.915056).
Neophytou, N.; Paul, A.; Lundstrom, M.S.; Klimeck, G. (2007), "Simulations of Nanowire Transistors: Atomic vs. Effective Mass Models," Journal of Computational Electronics.
Neophytou, N.; Paul, A.; Lundstrom, M.S.; Klimeck, G. (2007), "Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets," Simulation of Semiconductor Processes and Devices, 12: pg. 217-220, 09.
Klimeck, G. (2007), "NanoHUB.org Tutorial: Education Simulation Tools," Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on: pg. nil41-nil41, 01. 1-4244-0610-2. (DOI: 10.1109/NEMS.2007.351992).
Rahman, A.; Klimeck, G.; Lundstrom, M.S. (2005), "Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects," Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International: pg. 4, 12.
Wang, J.; Rahman, A.; Ghosh, A.W.; Klimeck, G.; Lundstrom, M.S. (2005), "On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors," IEEE Transactions on Electron Devices, 52, 7: pg. 1589-1595, 07. 1557-9646. (DOI: 10.1109/TED.2005.850945).
Reviews
The following are reviews of this resource from other site members.
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Posted on 26 November, 2006 by Anonymous
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Posted on 14 August, 2006 by Ali Khakifirooz
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Posted on 26 May, 2006 by Jing Wang
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Type Series Contributor(s) Dragica Vasileska, Gerhard Klimeck Date 09 Jul, 2008 Avg. Rating (0) Rate this The Kronig-Penney model is a simple approximation of a solid. The potential consists of a periodic arrangement of delta functions, square well or Coulomb well potentials. By means of epitaxial growth techniques artificial semiconductor superlattices can be realized, which behave very similar to the …
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Related Questions & Answers
The following are questions related to this tool that were posted by other users in our questions and answers forum.
- Highly non-spherical heavy hole bands for bulk GaAs?? - 1 response
- Strain in % or fraction - 1 response
- simulation is slow for large diameters - 1 response
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