Sending report ...NanoMOS 2.5 Source Code Download
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| Contributor(s) | Zhibin Ren, Sebastien Goasguen Purdue University, West Lafayette |
|---|---|
| Abstract | NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson's equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code. Version: 2.5 (Dec 11, 2002) Download the latest code from the project area on nanoFORGE |
| Cite this work | If you reference this work in a publication, please cite as follows: |
| Date posted | 22 Feb, 2005 |
| Type | Downloads |
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Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
Affiliated authors
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Rahman, A.; Lundstrom, M.S. (2005), "Exploring New Channel Materials for Nanoscale CMOS Devices: A Simulation Approach" (PhD Thesis), Purdue University.
Rahman, A.; Lundstrom, M.S. (2005), "Exploring New Channel Materials for Nanoscale CMOS Devices: A Simulation Approach" (PhD Thesis), Purdue University.
Reviews
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Posted on 15 March, 2007 by ADITYA
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Posted on 29 October, 2006 by Xue-Feng Zhang
See also
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- 0.0 Ranking Topic The NEGF Approach to Nano-Device Simulation
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