cntFET
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Usage Stats Overall Period: Updated 03 Jul, 2008 Users: 573 Jobs: 20605 Avg. exec. time: 46 mins Reviews & Citations Google/IEEE: updated 22 Apr, 2008 Avg. Review: Citations: 4
573 users, detailed statistics
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Available Versions
- 1.4 (published)
- 1.3 (unpublished)
- 1.2 (unpublished)
- 1.1 (unpublished)
- 1 (unpublished)
| Version | 1.4 - published on 08 May, 2008 |
|---|---|
| Contributor(s) | Neophytos Neophytou, Shaikh S. Ahmed Purdue University, West Lafayette Eric Polizzi University of Massachusetts, Amherst Gerhard Klimeck, Mark Lundstrom Purdue University, West Lafayette |
| At a glance | Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices |
| Screenshots | |
| Description | CNTFET can currently simulate the impact of quantum mechanical size quantization and phase coherence in zigzag nanotubes with both planar and coaxial exterior architectures. The application is based on the Non-Equilibrium Greens’ Function (NEGF) techniques using a pz-orbital nearest-neighbor tight binding. Full three-dimensional (3D) electrostatics has been captured by the Finite-Element-Method (FEM) of solving the Poisson Equation. Solution of this set of equations is computationally expensive. One can reduce the simulation time by using a mode-space approach instead of the real-space approach. By default the simulator solves for both electrons and holes, although one may activate electron-transport only. The numerical problem consists in computing the diagonal elements of the matrix Gr = [ EI - H - ∑ ]-1 (retarded Green’s function) and G< = G∑<G† (electron correlation Green’s function), where E is the energy level, H is the device Hamiltonian matrix, and ∑ and ∑< are self energies († denotes the transpose conjugate of a matrix). The algorithmic flow is based on Dyson’s equation solved through recursive Green’s function approach. Developed at Purdue University, CNTFET has been parallelized with Message Passing Interface (MPI) and ported to various computing platforms. The MPI is applied in the integration procedure to calculate the charge density over the energy spectrum while the Green’s function at each energy point is calculated by a serial algorithm. |
| Credits | CNTFET has been developed at Purdue University, West Lafayette, IN, USA. More information on CNTFET can be found by contacting Neophytos Neophytou or Shaikh S. Ahmed. |
| Cite this work | If you reference this work in a publication, please cite as follows:
In addition, we would appreciate it if you would add the following acknowledgment to your publication:
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| Type | Tools |
| Tags |
Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
Non-affiliated authors
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Myers-Riggs, R.R.; Roenker, K.P. (2005), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport" (Master's Thesis), University of Cincinnati.
Affiliated authors
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Neophytou, N.; Ahmed, S.S.; Klimeck, G. (2007), "Influence of vacancies on metallic nanotube transport properties," Applied Physics Letters, 90, 182119.
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Neophytou, N.; Ahmed, S.S.; Klimeck, G. (2007), "Non-equilibrium Green’s function (NEGF) simulation of metallic carbon nanotubes including vacancy defects," Journal of Computational Electronics, Springer Netherlands, 6, 1-3: pg. 317-320, 09. 1569-8025 (print) 1572-8137 (online). (DOI: 10.1007/s10825-006-0116-4).
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Neophytou, N.; Ahmed, S.S.; Kienle, D.; Lundstrom, M.S.; Klimeck, G. (2006), "Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org -- Non-Equilibrium Green's Function Simulations of the Impact of Atomic Defects on the Performance of Carbon Nanotube Transistors," American Physical Society, APS March Meeting, March 13-17, 2006, 03.
Myers-Riggs, R.R.; Roenker, K.P. (2005), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport" (Master's Thesis), University of Cincinnati.
Affiliated authors
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Neophytou, N.; Ahmed, S.S.; Klimeck, G. (2007), "Influence of vacancies on metallic nanotube transport properties," Applied Physics Letters, 90, 182119.
-
Neophytou, N.; Ahmed, S.S.; Klimeck, G. (2007), "Non-equilibrium Green’s function (NEGF) simulation of metallic carbon nanotubes including vacancy defects," Journal of Computational Electronics, Springer Netherlands, 6, 1-3: pg. 317-320, 09. 1569-8025 (print) 1572-8137 (online). (DOI: 10.1007/s10825-006-0116-4).
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Neophytou, N.; Ahmed, S.S.; Kienle, D.; Lundstrom, M.S.; Klimeck, G. (2006), "Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org -- Non-Equilibrium Green's Function Simulations of the Impact of Atomic Defects on the Performance of Carbon Nanotube Transistors," American Physical Society, APS March Meeting, March 13-17, 2006, 03.
Reviews
The following are reviews of this resource from other site members.
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Posted on 03 June, 2008 by shruti badhwar
I have been using CNTfet tool as a part of my M.S Thesis at JNCASR,India which involves electrical and magneic transport measurements in CNTFETs.
A comparison between the real- time experimental data, which is unfortunately mired with the effects of hysteresis due to moisture, random telegraphic noise due to charge-traps in the gate-oxide etc, and the ideal/theoretical current-voltage curves generated by solving the Poisson’s equation using CNTfet, can be used to account for the irregularities.
Even more importantly, features such as density and potential profiles, incorporated in the tool help in developing a useful insight to the experimental results obtained, without worrying about issues that are associated with robustness and computational efficiency of the code.
The dedicated, en masse effort of the people associated with nanohub, to bring the scientific community on a common platform must certainly be lauded.
Related Questions & Answers
The following are questions related to this tool that were posted by other users in our questions and answers forum.
- i can't find output in simulation of cntfet - 1 response
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