2DFET
18 Feb 2021 | Contributor(s): Ning Yang, Tong Wu, Jing Guo
Calculate the I-V characteristics of field-effect transistors (FETs) based on monolayer two-dimensional (2D) materials.
Spin Quantum Gate Lab
26 Apr 2019 | Contributor(s): Tong Wu, Qimao Yang, Daniel Volya, Jing Guo
Simulate the device-level characteristics of spin-based quantum gates.