Nanoelectronics Research Initiative
The Nanoelectronics Research Initiative (NRI), a consortium of companies in the Semiconductor Industry Association, is seeking to accelerate research in nanoelectronics for the benefit of the semiconductor industry. Semiconductor Research Corporation has formed a subsidiary—Nanoelectronics Research Corporation (NERC)—to administer the NRI research program. The research is concentrated in U.S. universities.
The fifteen-year goal of NRI is to demonstrate novel computing devices with critical dimensions below 10 nanometers and to exercise them in simple computer circuits. These results will enable the semiconductor industry to extend Moore’s Law—a 40-year-old prediction that the industry can double the amount of transistors it places on a computer chip every couple of years—far beyond the year 2020 when the potential limits of the current industry technology known as CMOS may be approached.
NRI research is conducted through university-based centers with the involvement of the Semiconductor Industry Association Sponsors. Research results will be disseminated to NRI Sponsors.
This page provides a forum for private communication within the NRI community. Access to this page is restricted to industrial and academic members of the NRI program. To receive authorization to enter, click on the Join this Group button.
NRI group members will also have access to nanoHUB’s online web meetings and remote Linux workspaces.
Relevant Resources on the nanoHUB
Here are some nanoHUB simulation tools and seminars relevant to this group:
- Arijit Raychowdhury, Simulating with PETE: Purdue Exploratory Technology Evaluator
- Arijit Raychowdhury, PETE: Purdue Emerging Technology Evaluator
- Supriyo Datta, CQT: Concepts of Quantum Transport
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Simulation of highly idealized, atomic scale MQCA logic circuits
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15 Nov. 2007 | Publications | Contributor(s): Dmitri Nikonov
Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution of the density-matrix equation with relaxation. The devices are shown to satisfy requirements for …