nanoHUB-U: Essentials of MOSFETs
Course overview Offering: Fall 2018 (Self-Paced) Section: Default
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Welcome
Lectures
- How to Take this Course
Unit 1: Transistors, Compact Models, and Circuits
Lectures
- L1.1 The MOSFET as a Black Box
- L1.2 Digital Circuits
- L1.3 Analog/RF Circuits
- L1.4 MOSFET Device Metrics
- L1.5 Compact Models
- L1.6 Unit 1 Recap
Homework
Unit 2: Essential Physics of the MOSFET
Lectures
- L2.1 Energy Band Diagram Review
- L2.2 Energy Band View of the MOSFET
- L2.3 MOSFET IV Theory
- L2.4 The Square Law MOSFET
- L2.5 The Virtual Source Model
- L2.6 Unit 2 Recap
Homework
Unit 3: MOS Electrostatics
Lectures
- L3.1 Energy Band Diagram Approach
- L3.2 The Depletion Approximation
- L3.3 Gate Voltage and Surface Potential
- L3.4 Flat-band Voltage
- L3.6 The Mobile Charge vs. Surface Potential
- L3.7 The Mobile Charge vs. Gate Voltage
- L3.8 2D MOS Electrostatics (will be available shortly)
- L3.9 The VS Model Revisited
- L3.10 Unit 3 Recap
Homework
Unit 4: Transmission Theory of the MOSFET
Lectures
- L4.1 The Landauer Approach
- L4.2 Landauer at Low and High Bias
- L4.3 The Ballistic MOSFET
- L4.4 Velocity at the Virtual Source
- L4.5 Transmission Theory of the MOSFET
- L4.6 The VS Model Revisited
- L4.7 Analysis of Experiments (will be available shortly)
- L4.8 Unit 4 Recap
Homework
Unit 5: Additional Topics
Lectures
- L5.1 Limits of MOSFETs
- L5.2 Power MOSFETs
- L5.3 High Electron Mobility Transistors (HEMTs)
- L5.4 Review of PN Junctions
- L5.5 Heterostructure Bipolar Transistors (HBTs)
- L5.6 A Second Look at Compact Model Circuits
- L5.7 Unit 5 Recap