ECE 606: Solid State Devices I
Course overview Offering: Self-Paced (2020) Section: Default
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Welcome
Lectures
- New asset group
Unit 1: Introduction
Lectures
- L1.1 Solid State Devices
- L1.2 Basic Device Operations – Raising 1,000 Questions
- L1.3 Course Content and Requirements
Unit 2: Materials
Lectures
- L2.1 Typical Semiconducting Materials
- L2.2 Typical Applications of Elemental and Compound Semiconductors
- L2.3 Atomic Positions and Bond Orientations
Unit 3: Crystals
Lectures
- L3.1 Crystal Definitions
- L3.2 Tables of Bravais Lattice
- L3.3 Density of Definitions and Applications to Common Material
- L3.4 Surfaces, Miller Index
Unit 4: Elements of Quantum Mechanics
Lectures
- L4.1 Classic Systems
- L4.2 Strange Experimental Resuls => The Advent of Quantum Mechanics
- L4.3 Why Do We Need Quantum Mechanics?
- L4.4 Formulation of Schrödinger's Equation
Unit 5: Analytical Solutions to Free and Bound Electrons
Lectures
- L5.1 Free and Tightly Bound Electrons
- L5.2 Electrons in a Finite Potential Well
Unit 6: Electron Tunneling - Emergence of Bandstructure
Lectures
- L6.1 Transfer Matrix Method
- L6.2 Tunneling Through a Single Barrier
- L6.3 Tunneling Through a Double Barrier Structure
- L6.4 Tunneling Through N Barriers - Formation of Bandstructure
- L6.5 Analytical and Numerical Solution Strategies
Unit 7: Bandstructure - in 1D Periodic Potentials
Lectures
- L7.1 Bandstructure - Problem Formulation
- L7.2 Bandstructure - Solutions
- L7.3 Band Properties
Unit 8: Brillouin Zone and Reciprocal Lattice
Lectures
- L8.1 1D Problems
- L8.2 2D Problems
- L8.3 3D Problems
Unit 9: Constant Energy Surfaces and Density of States
Lectures
- L9.1 Constant Energy Surfaces
- L9.2 Density of States
Unit 10: Bandstructure in Real Materials (Si, Ge, GaAs)
Lectures
- L10.1 E(k) Diagrams in Specific Crystal Directions
- L10.2 Constant Energy Surfaces - Effective Mass Tensor
- L10.3 Density of States Effective Mass
Unit 11: Bandstructure Measurements
Lectures
- L11.1 Bandgap Measurements
- L11.2 Effective Mass Measurements
Unit 12: Occupation of States
Lectures
- L12.1 Rules of Filling Electronic States
- L12.2 Derivation of Fermi-Dirac Statistics: Three Techniques
- L12.3 Intrinsic Carrier Concentration
Unit 13: Diagrams
Lectures
- L13.1 Band Diagrams
Unit 14: Doping
Lectures
- L14.1 Basic Concepts of Donors and Acceptors
- L14.2 Statistics of Donor and Acceptor Levels
- L14.3 Temperature Dependence of Carrier Concentration
- L14.4 Multiple Doping, Co-Doping, And Heavy-Doping
Unit 15: Introduction to Non-Equilibrium
Lectures
- L15.1 Steady State, Transient, Equilibrium
- L15.2 Recombination & Generation Overview
- New asset group
Unit 16: Recombination and Generation
Lectures
- L16.1 Motivation of R-G Formula
- L16.2.1 SRH Formula - Trap Assisted Recombination Rates
- L16.2.2 SRH Formula - Capture and Emission Relationship (n1 and p1)
- L16.2.3 SRH Formula - Steady State Trap Population
- L16.2.4 SRH Formula - Recombination-Generation Rate
- L16.3 Applications of SRH Formula for Special Cases
- L16.4 Direct and Auger Recombination
- L16.5 Nature of Interface States
- L16.6 SRH Formula Adapted to Interface States
- L16.7 Surface Recombination in Depletion Region
Unit 17: Intro to Transport - Drift, Mobility, Diffusion, Einstein Relationship
Lectures
- L17.1 Drift Current
- L17.2 Mobility
- L17.3 Carrier Concentration from Hall Effect
- L17.4 Physics of Diffusion – Einstein Relationship
Unit 18: Semiconductor Equations
Lectures
- L18.1 Continuity Equations
- L18.2 Analytical Solutions (Strategy & Examples)
- L18.3 Numerical Solutions
Unit 19: Introduction to PN Junctions
Lectures
- L19.1 Structure and Depletion Region
- L19.2 Drawing Band-Diagrams in Equilibrium
- New asset group
Unit 20: PN Diode I-V Characteristics
Lectures
- L20.1 Band Diagram with Applied Bias
- L20.2 Derivation of the Forward Bias Formula
- L20.3 Forward Bias - Non-Linear Regime
- L20.4 Non-Ideal Effects
Unit 21: PN Diode AC Response
Lectures
- L21.1 Conductance and Series Resistance
- L21.2 Majority Carrier Junction Capacitance
- L21.3 Minority Carrier Diffusion Capacitance
Unit 22: PN Diode Large Signal Response
Lectures
- L22.1 Charge Control Model
- L22.2 Turn-Off and Turn-On Characteristics
- L22.3 Steady-State Expression From Charge Continuity
Unit 23: Schottky Diode
Lectures
- L23.1 Basics
- L23.2 Physical Processes
- L23.3 Practical Issues
Unit 24: Bipolar Junction Transistor - Fundamentals
Lectures
- L24.1 Introduction
- L24.2 Band Diagram in Equilibrium
- L24.3 Currents in BJTs
- L24.4 Ebers Moll Model
Unit 25: Bipolar Junction Transistor - Design
Lectures
- L25.1 Current Gain in BJTs
- L25.2 Base Doping Design
- L25.3 Collector Doping Design (Kirk Effect, Base Pushout)
- L25.4 Emitter Doping Design
- L25.5 Poly-Si Emitter
- L25.6 Short Base Transport
Unit 26: Bipolar Junction Transistor - High Frequency Response
Lectures
- L26 BJT High-Frequency Response
Unit 27: Heterojunction Bipolar Transistor
Lectures
- L27.1 Applications, Concept, Innovation, Nobel Prize
- L27.2 Heterojunction Equilibrium Solution
- L27.3 Types of Heterojunctions
- L27.4 Abrupt Junction HBTs
- L27.5 Graded Junction HBTs
- L27.6 Graded Base HBTs
- L27.7 Double Heterojunction HBTs
- L27.8 Modern Designs
Unit 28: MOS Electrostatics and MOScap
Lectures
- L28.1 Background
- L28.2 Band Diagram in Equilibrium and with Bias -->MOS cap
- L28.3 Qualitative Q-V Characteristics of MOS Capacitor
- L28.4 MOScap Induced Charges in Depletion and Inversion
- L28.5 MOScap Exact Solution of the Electrostatic Problem
Unit 29: MOS Capacitor Signal Response
Lectures
- L29.1 Introduction / Background
- L29.2 Small Signal Response
- L29.3 Large Signal Response
Unit 30: MOSFET Introduction
Lectures
- L30.1 Sub-Threshold (Depletion) Current
- L30.2 Above-Threshold, Inversion Current
- L30.3 Velocity Saturation in Simplified Theory
- L30.4 Comments on Bulk Charge Theory & Small Transistors
Unit 31: MOSFET Non-Idealities
Lectures
- L31.1 Flat Band Voltage - What Is It and How to Measure It?
- L31.2 Threshold Voltage Shift Due to Trapped Charges
- L31.3 Physics of Interface Traps
Unit 32: Modern MOSFET
Lectures
- L32.1 Some of Moore's Law Challenges
- L32.2 Short Channel Effect
- L32.3 Control of Threshold Voltage
- L32.4 Mobility Enhancement