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Contributors: View

Ahmad Ehteshamul Islam

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Contributions 2 (detailed usage)
Affiliation Purdue University, West Lafayette
Web Site http://web.ics.purdue.edu/~aeislam
Biography Ahmad Ehteshamul Islam is a Direct PhD student of the Electrical and Computer Engineering Department at Purdue University. He started working with his present supervisor, Prof. M. Ashraful Alam on Fall 2005. His current research interest involves theory of oxide reliability in nanoscale devices, specifically on the physics of degradation in SiON, High-K and Strained-Si devices. He has also worked on modeling and characterization of MOS devices, while he was appointed in EE department of Bangladesh Univ. of Engg & Tech. as Lecturer.

Contributions

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  1. Device Reliability Tool

    This resource has a 6.2 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 21 Aug, 2008
    Users: 187
    Jobs: 760
    Avg. exec. time: 57 secs
    Reviews & Citations
    Google/IEEE: updated 05 Feb, 2008
    Avg. Review: 4.0 out of 5 stars
    Citations: 1

    187 users, detailed statistics

    1 review (Review this)

    1 citation

    1 question (Ask a question)

    28 Aug. 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam

    Analyzes MOS device reliability based on Negative Bias Temperature Instability (NBTI).

  2. Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

    This resource has a 5.0 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: updated 01 Aug, 2008
    Users: 3
    Reviews & Citations
    Google/IEEE
    Avg. Review: 0.0 out of 5 stars
    Citations: 0

    3 users

    0 reviews (Review this)

    0 citations

    01 Jul. 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam

    Mobility degradation due to generation of interface traps, Δμeff(NIT), is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there is a general perception that Δμeff(NIT) is relatively insignificant (compared to Δμeff due to …

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