nanoHUB.org: online simulations and more

Dr. Gerold W. Neudeck is a Full Professor of Electrical & Computer Engineering at Purdue University West Lafaytette, IN. He has authored or co-authored 9 books, is an editor for three multiple volume book series, and has 271 refereed professional research papers. He has completed 28 Ph.D. students and 26 MSEE theses students. He holds 14 patents on novel MOSFET and Bipolar solid state device structures. He has served as an Editor of IEEE Transactions on Electron Devices.

His research interests have centered around solid state device physics and fabrication technologies which includes research on iso-type Ge/Si heterojunctions, HF noise in GaAs diodes, amorphous silicon films, amorphous Si-TFTs, extreme impulse current modeling of devices, and polysilicon emitter Bipolar fabrication processes. Presently his research using using selective (SEG), silicon epitaxial lateral overgrowth (ELO) has let to several breakthroughs in the fabrication of fully depleted double and dual-gated SOI MOSFETs with threshold switching by the 4th terminal, micromechanical sensors, advanced triple-self-aligned BJT devices and advanced very high speed BJT devices. His current work is on fabricating multiple layers of SOI materials and deep submicron FD SOI MOSFETs in 2 layers.

Dr. Neudeck received awards including the Dow Outstanding Young Faculty, the Western Electric Fund, the D. D. Ewing, Eta Kappa Nu outstanding EE Faculty, the Honeywell Award, and the A. A. Potter Award. He is a Fellow of the Institute of Electrical and Electronics Engineering (IEEE). He also was awarded the H. S. Nyquist Award for his contributions to the field of engineering.