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Shaikh S. Ahmed
| Contributions | 14 |
|---|---|
| Affiliation | Purdue University, West Lafayette |
| Web Site | http://web.ics.purdue.edu/~ssahmed/ |
| Biography | Shaikh Shahid Ahmed received the B.S. degree in electrical and electronic engineering from Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh, in 1998 and the M.S. and Ph. D. degrees in electrical engineering from Arizona State University, Tempe, Arizona, USA, in 2003 and 2005 respectively. Presently, he is working as a Postdoctoral Research Associate in the Electrical and Computer Engineering Department at Purdue University, West Lafayette, Indiana, USA. His research focuses mainly in the areas of (a) atomistic electronic structure and quantum transport models and methodologies for nanostructures including quantum dots and quantum qubits, carbon nanotube and ribbons, nanowires and sensors, solid-state light, (b) classical and non-classical semiconductor device and process simulations, (c) novel numerical algorithms particularly for molecular dynamics and Green’s function computation, (d) large-scale high-performance parallel cluster and distributed computing and developing community nanotechnology application packages, and (e) analog and digital design. He has published more than 40 journal and conference articles and 2 book chapters in these and related fields. |
Contributions
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I − Models and Benchmarks
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 18 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Ben Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of …
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 17 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in nanostructures …
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CNTFET Lab
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 414 Jobs: 12201 Avg. exec. time: 2 hours Reviews & Citations Google/IEEE: updated 06 Jul, 2007 Avg. Review: Citations: 4
09 Feb. 2007 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
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Examples for QuaMC 2D particle-based device Simulator Tool
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Reviews & Citations Google/IEEE Avg. Review: Citations: 0
12 May. 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
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FETToy
- This resource has a 9.5 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 482 Jobs: 5907 Avg. exec. time: 5 secs Reviews & Citations Google/IEEE: updated 28 Apr, 2008 Avg. Review: Citations: 11
14 Feb. 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Toy model to simulate I-V characteristics of nanoscale double gate MOSFETs
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Modeling Coulomb Effects in Nanoscale Devices
- This resource has a 9.9 Ranking
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 4 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
28 Apr. 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, David K. Ferry
We describe the development of the modeling efforts focused towards proper description of the threshold voltage fluctuations due to the discrete impurity effects (different number and different distribution of the impurities from device to device on the same chip).NSF, ONRW. J. Gross, D. Vasileska …
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MOSCap
- This resource has a 6.3 Ranking
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 377 Jobs: 3506 Avg. exec. time: 4 secs Reviews & Citations Google/IEEE Avg. Review: Citations: 0
06 Apr. 2006 | Tools | Contributor(s): Akira Matsudaira, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska
Simulates the capacitance of bulk and dual gate capacitors for a variety of
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MOSFET
- This resource has a 7.5 Ranking
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 828 Jobs: 9766 Avg. exec. time: 6 mins Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Mar. 2006 | Tools | Contributor(s): Matteo Mannino, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal
Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)
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nanoFET Lab
- This resource has a 10.0 Ranking
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 318 Jobs: 13988 Avg. exec. time: 2 hours Reviews & Citations Google/IEEE: updated 30 Nov, 2007 Avg. Review: Citations: 1
09 Feb. 2007 | Tools | Contributor(s): M. P. Anantram, Shaikh S. Ahmed, Alexei Svizhenko, Derrick Kearney, Gerhard Klimeck
Simulates quantum ballistic transport properties in two-dimensional MOSFET devices
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nanoMOS
- This resource has a 9.6 Ranking
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 367 Jobs: 2636 Avg. exec. time: 22 mins Reviews & Citations Google/IEEE: updated 25 Apr, 2008 Avg. Review: Citations: 42
19 May. 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Mark Lundstrom
2D simulator for thin body MOSFETs, with transport models ranging from drift-diffusion to quantum diffusive.
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Particle-Based Device Simulators Description
- This resource has a 4.8 Ranking
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 2 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
28 Apr. 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
In this presentation we give an overview of partcle-based device simulations with focus on implementation details.
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QuaMC 2D Lab
- This resource has a 8.4 Ranking
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 183 Jobs: 3474 Avg. exec. time: 38 mins Reviews & Citations Google/IEEE: updated 30 Nov, 2007 Avg. Review: Citations: 1
23 Feb. 2007 | Tools | Contributor(s): Shaikh S. Ahmed, Dragica Vasileska
Quantum-corrected Monte-Carlo simulator for MOSFET devices
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Schred
- This resource has a 9.9 Ranking
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 532 Jobs: 10412 Avg. exec. time: 48 secs Reviews & Citations Google/IEEE: updated 25 Apr, 2008 Avg. Review: Citations: 74
09 Feb. 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Matteo Mannino, Akira Matsudaira, Gerhard Klimeck
Solves Schrodinger/Poisson equations for a 1D quantum well, as you might have MOSFET, SOS, or SOI structure.
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Why QuaMC 2D and Particle-Based Device Simulators?
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Reviews & Citations Google/IEEE Avg. Review: Citations: 0
13 May. 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We describe the need for particle-based device simulators when modeling nanoscale devices.