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Contributors: View

Arijit Raychowdhury

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Affiliation Purdue University, West Lafayette
Web Site http://web.ics.purdue.edu/~araycho/Site/Welcome.html
Biography

Arijit Raychowdhury received his B.E. degree in 2001 in Electronics and Telecommunication engineering from Jadavpur University, Calcutta, India. Since 2002, he has been pursuing Ph.D. in Electrical and Computer engineering at Purdue University, IN. He has worked as an Analog Circuit Designer with Texas Instruments Inc. (2002 to 2003) and with the Circuit Research Labs, Intel Corporation (summer of 2005 and 2006) pursuing design ideas with novel nano-devices. His research interests include device/circuit design for scaled silicon and non-silicon technologies. Mr. Raychowdhury has received academic excellence awards in 1997, 2000, and 2001, the Meissner Fellowship from Purdue University in 2002, the NASA INAC Fellowship in 2003 and the Intel PhD Fellowship Award in 2005. He has received Best Paper Awards at IEEE NANO 2003 and ISLPED, 2006. He holds six patents and has published over thirty articles in journals and refereed conferences.

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  1. PETE: Purdue Exploratory Technology Evaluator

    This resource has a 8.5 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 06 Oct, 2008
    Users: 115
    Jobs: 3645
    Avg. exec. time: 3 mins
    Reviews & Citations
    Google/IEEE
    Avg. Review: 5.0 out of 5 stars
    Citations: 0

    115 users, detailed statistics

    1 review (Review this)

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    27 Jun. 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

    Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of I-V and C-V tables. The Benchmark circuits include minim

  2. Simulating with PETE: Purdue Exploratory Technology Evaluator

    This resource has a 0.0 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: updated 01 Oct, 2008
    Users: 0
    Reviews & Citations
    Google/IEEE
    Avg. Review: 0.0 out of 5 stars
    Citations: 0

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    25 Sep. 2007 | Online Presentations | Contributor(s): Arijit Raychowdhury

    Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of I-V and C-V tables. The Benchmark circuits include minimum sized inverter, nand chain, norchain, …

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Results 1 - 2 of 2