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Ramesh Venugopal
| Contributions | 4 (detailed usage) |
|---|---|
| Affiliation | Purdue University, West Lafayette |
Contributions
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A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 51 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
51 users
19 Oct. 2006 | Publications | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the …
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Modeling Quantum Transport in Nanoscale Transistors
- This resource has a 10.0 Ranking
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 126 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
126 users
30 Oct. 2006 | Publications | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new …
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nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
- This resource has a 9.0 Ranking
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 142 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
142 users
06 Oct. 2006 | Publications | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space …
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Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 25 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
25 users
28 Sep. 2006 | Publications | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the …