Contributors: View
Akira Matsudaira

| Contributions | 5 |
|---|---|
| Affiliation | Purdue University, West Lafayette |
| Biography | Akira Matsudaira was a senior student of Electrical and Computer Engineering at Purdue University. He is graduated at May 2006 with BS degree of |
Contributions
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CNTbands 2.0
- This resource has a 9.5 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 544 Jobs: 5653 Avg. exec. time: 43 secs Reviews & Citations Google/IEEE: updated 23 May, 2007 Avg. Review: Citations: 1
14 Dec. 2006 | Tools | Contributor(s): Youngki Yoon, Diego Kienle, James K Fodor, Gengchiau Liang, Akira Matsudaira, Gerhard Klimeck, Jing Guo
CNTbands v2.0 can simulate electronic band structure and density-of-states for carbon nanotubes (CNTs) and carbon nanoribbons (CNRs). It also computes some basic parameters, such as nanotube diameter, number of hexagons in the unit cell, band gap, etc. Users may select the CNR structure to be …
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FETToy
- This resource has a 9.5 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 482 Jobs: 5907 Avg. exec. time: 5 secs Reviews & Citations Google/IEEE: updated 28 Apr, 2008 Avg. Review: Citations: 11
14 Feb. 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Toy model to simulate I-V characteristics of nanoscale double gate MOSFETs
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MOSCap
- This resource has a 6.3 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 377 Jobs: 3506 Avg. exec. time: 4 secs Reviews & Citations Google/IEEE Avg. Review: Citations: 0
06 Apr. 2006 | Tools | Contributor(s): Akira Matsudaira, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska
Simulates the capacitance of bulk and dual gate capacitors for a variety of
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nanoMOS
- This resource has a 9.6 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 367 Jobs: 2636 Avg. exec. time: 22 mins Reviews & Citations Google/IEEE: updated 25 Apr, 2008 Avg. Review: Citations: 42
19 May. 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Mark Lundstrom
2D simulator for thin body MOSFETs, with transport models ranging from drift-diffusion to quantum diffusive.
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Schred
- This resource has a 9.9 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 532 Jobs: 10412 Avg. exec. time: 48 secs Reviews & Citations Google/IEEE: updated 25 Apr, 2008 Avg. Review: Citations: 74
09 Feb. 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Matteo Mannino, Akira Matsudaira, Gerhard Klimeck
Solves Schrodinger/Poisson equations for a 1D quantum well, as you might have MOSFET, SOS, or SOI structure.