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Contributors: View

Akira Matsudaira

Contributor picture

Contributions 5
Affiliation Purdue University, West Lafayette
Biography

Akira Matsudaira was a senior student of Electrical and Computer Engineering at Purdue University. He is graduated at May 2006 with BS degree of
Computer Engineering, Physics, and Mathematics. He continued in graduate study in the field of solid state physics, quantum mechanics, and the modeling and simulation of nanoelectronic devices at University of Illinois Urbana Champaign.

Contributions

  1. CNTbands 2.0

    This resource has a 9.5 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: Updated 16 May, 2008 more ›
    Users: 544
    Jobs: 5653
    Avg. exec. time: 43 secs
    Reviews & Citations
    Google/IEEE: updated 23 May, 2007
    Avg. Review: 4.5 out of 5 stars
    Citations: 1

    2 reviews (Review this)

    1 citation

    14 Dec. 2006 | Tools | Contributor(s): Youngki Yoon, Diego Kienle, James K Fodor, Gengchiau Liang, Akira Matsudaira, Gerhard Klimeck, Jing Guo

    CNTbands v2.0 can simulate electronic band structure and density-of-states for carbon nanotubes (CNTs) and carbon nanoribbons (CNRs). It also computes some basic parameters, such as nanotube diameter, number of hexagons in the unit cell, band gap, etc. Users may select the CNR structure to be …

  2. FETToy

    This resource has a 9.5 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: Updated 16 May, 2008 more ›
    Users: 482
    Jobs: 5907
    Avg. exec. time: 5 secs
    Reviews & Citations
    Google/IEEE: updated 28 Apr, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 11

    7 reviews (Review this)

    11 citations

    14 Feb. 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Toy model to simulate I-V characteristics of nanoscale double gate MOSFETs

  3. MOSCap

    This resource has a 6.3 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: Updated 16 May, 2008 more ›
    Users: 377
    Jobs: 3506
    Avg. exec. time: 4 secs
    Reviews & Citations
    Google/IEEE
    Avg. Review: 2.0 out of 5 stars
    Citations: 0

    1 review (Review this)

    0 citations

    06 Apr. 2006 | Tools | Contributor(s): Akira Matsudaira, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska

    Simulates the capacitance of bulk and dual gate capacitors for a variety of

  4. nanoMOS

    This resource has a 9.6 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: Updated 16 May, 2008 more ›
    Users: 367
    Jobs: 2636
    Avg. exec. time: 22 mins
    Reviews & Citations
    Google/IEEE: updated 25 Apr, 2008
    Avg. Review: 0.0 out of 5 stars
    Citations: 42

    0 reviews (Review this)

    42 citations

    19 May. 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Mark Lundstrom

    2D simulator for thin body MOSFETs, with transport models ranging from drift-diffusion to quantum diffusive.

  5. Schred

    This resource has a 9.9 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: Updated 16 May, 2008 more ›
    Users: 532
    Jobs: 10412
    Avg. exec. time: 48 secs
    Reviews & Citations
    Google/IEEE: updated 25 Apr, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 74

    4 reviews (Review this)

    74 citations

    09 Feb. 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Matteo Mannino, Akira Matsudaira, Gerhard Klimeck

    Solves Schrodinger/Poisson equations for a 1D quantum well, as you might have MOSFET, SOS, or SOI structure.