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Contributors: View

Zhibin Ren

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Contributions 6
Affiliation Purdue University, West Lafayette
Biography

Contributions

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Results 1 - 6 of 6

  1. nanoMOS

    This resource has a 9.6 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: Updated 16 May, 2008 more ›
    Users: 367
    Jobs: 2636
    Avg. exec. time: 22 mins
    Reviews & Citations
    Google/IEEE: updated 25 Apr, 2008
    Avg. Review: 0.0 out of 5 stars
    Citations: 42

    0 reviews (Review this)

    42 citations

    19 May. 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Mark Lundstrom

    2D simulator for thin body MOSFETs, with transport models ranging from drift-diffusion to quantum diffusive.

  2. nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

    This resource has a 8.7 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: updated 01 May, 2008
    Users: 109
    Reviews & Citations
    Google/IEEE
    Avg. Review: 0.0 out of 5 stars
    Citations: 0

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    0 citations

    06 Oct. 2006 | Publications | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space …

  3. NanoMOS 2.5 Source Code Download

    This resource has a 8.1 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: updated 01 May, 2008
    Users: 0
    Reviews & Citations
    Google/IEEE: updated 17 May, 2007
    Avg. Review: 4.5 out of 5 stars
    Citations: 1

    2 reviews (Review this)

    1 citation

    22 Feb. 2005 | Downloads | Contributor(s): Zhibin Ren, Sebastien Goasguen

    NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the …

  4. Nanoscale MOSFETs: Physics, Simulation and Design

    This resource has a 10.0 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: updated 01 May, 2008
    Users: 229
    Reviews & Citations
    Google/IEEE
    Avg. Review: 0.0 out of 5 stars
    Citations: 0

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    26 Oct. 2006 | Publications | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer …

  5. Schred Source Code Download

    This resource has a 6.7 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: updated 01 May, 2008
    Users: 1
    Reviews & Citations
    Google/IEEE
    Avg. Review: 4.0 out of 5 stars
    Citations: 0

    2 reviews (Review this)

    0 citations

    09 Mar. 2005 | Downloads | Contributor(s): Dragica Vasileska, Zhibin Ren

    Schred 2.0 calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a typical SOI structure by solving self-consistently the one-dimensional (1D) Poisson equation and the …

  6. Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

    This resource has a 7.5 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: updated 01 May, 2008
    Users: 61
    Reviews & Citations
    Google/IEEE
    Avg. Review: 0.0 out of 5 stars
    Citations: 0

    0 reviews (Review this)

    0 citations

    28 Sep. 2006 | Publications | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic

    In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the …

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Results 1 - 6 of 6