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Jing Guo
| Contributions | 14 |
|---|---|
| Affiliation | University of Florida |
| Web Site | http://www.guo.ece.ufl.edu/ |
| Biography | Jing Guo is currently an assistant professor in Electrical Engineering at University of Florida, Gainesville, FL. His current research work centers on modeling and simulation of carbon nanotube electronic and optoelectronic devices. He has previously worked on simulation of silicon nanotransistors and single-electron transistors. He is the developer of CNTbands and co-developer of FETToy on the nanoHUB. |
Contributions
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A Tutorial for Nanoelectronics Simulation Tools
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 0 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
03 Jul. 2007 | Online Presentations | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief introduction to the simulator is presented, followed by voiced presentations featuring the simulator in …
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Bandstructure of Carbon Nanotubes and Nanoribbons
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 15 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jun. 2007 | Learning Modules | Contributor(s): James K Fodor, Seokmin Hong, Jing Guo
This learning module introduces users to the Carbon-Nano Bands simulation tool, which simulates the bandstructure of Carbon Nanotubes (CNTs) and Nanoribbons (CNRs). To gives users a strong background in bandstructure, the module starts with sections that introduce bandstructure basics. To this …
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Carbon Nanotube Electronics: Modeling, Physics, and Applications
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 419 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Oct. 2006 | Publications | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ …
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CNTbands 2.0
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 544 Jobs: 5653 Avg. exec. time: 43 secs Reviews & Citations Google/IEEE: updated 23 May, 2007 Avg. Review: Citations: 1
14 Dec. 2006 | Tools | Contributor(s): Youngki Yoon, Diego Kienle, James K Fodor, Gengchiau Liang, Akira Matsudaira, Gerhard Klimeck, Jing Guo
CNTbands v2.0 can simulate electronic band structure and density-of-states for carbon nanotubes (CNTs) and carbon nanoribbons (CNRs). It also computes some basic parameters, such as nanotube diameter, number of hexagons in the unit cell, band gap, etc. Users may select the CNR structure to be …
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FETToy
- This resource has a 9.5 Ranking
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 482 Jobs: 5907 Avg. exec. time: 5 secs Reviews & Citations Google/IEEE: updated 28 Apr, 2008 Avg. Review: Citations: 11
14 Feb. 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Toy model to simulate I-V characteristics of nanoscale double gate MOSFETs
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Introduction to CNTbands
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 12 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
28 Jun. 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the CNTbands simulator. A brief introduction to CNTbands is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …
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Introduction to FETToy
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 9 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
03 Jul. 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …
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Introduction to nanoMOS
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 7 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
02 Jul. 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …
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Introduction to Quantum Dot Lab
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 260 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
02 Jul. 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the Quantum Dot Lab simulator. A brief introduction to Quantum Dot Lab is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable …
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Introduction to Schred
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 9 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
28 Jun. 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …
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MOSCNT: code for carbon nanotube transistor simulation
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 408 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
15 Nov. 2006 | Downloads | Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that …
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Optimization of Transistor Design for Carbon Nanotubes
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 181 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
21 Jan. 2006 | Online Presentations | Contributor(s): Jing Guo
We have developed a self-consistent atomistic simulator for CNTFETs. Using the simulator, we show that a recently reported high-performance CNTFET delivers a near ballistic on-current. The off-state, however, is significantly degraded because the CNTFET operates like a non-conventional Schottky …
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Theory of Ballistic Nanotransistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 2 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
27 Nov. 2002 | Publications | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to …
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Towards Multi-Scale Modeling of Carbon Nanotube Transistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 195 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
21 Sep. 2006 | Publications | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon …