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Jing Guo
| Contributions | 14 (detailed usage) |
|---|---|
| Affiliation | University of Florida |
| Web Site | http://www.guo.ece.ufl.edu/ |
| Biography | Jing Guo is currently an assistant professor in Electrical Engineering at University of Florida, Gainesville, FL. His current research work centers on modeling and simulation of carbon nanotube electronic and optoelectronic devices. He has previously worked on simulation of silicon nanotransistors and single-electron transistors. He is the developer of CNTbands and co-developer of FETToy on the nanoHUB. |
Contributions
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A Tutorial for Nanoelectronics Simulation Tools
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Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 0 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
03 Jul. 2007 | Online Presentations | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief introduction to the simulator is presented, followed by voiced presentations featuring the simulator in …
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Bandstructure of Carbon Nanotubes and Nanoribbons
- This resource has a 5.9 Ranking
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Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 18 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
18 users
14 Jun. 2007 | Learning Modules | Contributor(s): James K Fodor, Seokmin Hong, Jing Guo
This learning module introduces users to the Carbon-Nano Bands simulation tool, which simulates the bandstructure of Carbon Nanotubes (CNTs) and Nanoribbons (CNRs). To gives users a strong background in bandstructure, the module starts with sections that introduce bandstructure basics. To this …
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Carbon Nanotube Electronics: Modeling, Physics, and Applications
- This resource has a 10.0 Ranking
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Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 404 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
404 users
30 Oct. 2006 | Publications | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ …
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CNTbands 2.0
- This resource has a 9.0 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Overall Period: Updated 19 Jul, 2008 Users: 1875 Jobs: 17809 Avg. exec. time: 27 secs Reviews & Citations Google/IEEE: updated 28 Apr, 2008 Avg. Review: Citations: 10
1875 users, detailed statistics
14 Dec. 2006 | Tools | Contributor(s): Youngki Yoon, Diego Kienle, James K Fodor, Gengchiau Liang, Akira Matsudaira, Gerhard Klimeck, Jing Guo
CNTbands v2.0 can simulate electronic band structure and density-of-states for carbon nanotubes (CNTs) and carbon nanoribbons (CNRs). It also computes some basic parameters, such as nanotube diameter, number of hexagons in the unit cell, band gap, etc. Users may select the CNR structure to be …
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FETToy
- This resource has a 9.8 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Overall Period: Updated 19 Jul, 2008 Users: 1552 Jobs: 26229 Avg. exec. time: 5 secs Reviews & Citations Google/IEEE: updated 28 Apr, 2008 Avg. Review: Citations: 20
1552 users, detailed statistics
14 Feb. 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Toy model to simulate I-V characteristics of nanoscale double gate MOSFETs
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Introduction to CNTbands
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Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 14 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 users
28 Jun. 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the CNTbands simulator. A brief introduction to CNTbands is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …
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Introduction to FETToy
- This resource has a 5.7 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 12 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
12 users
03 Jul. 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …
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Introduction to nanoMOS
- This resource has a 5.6 Ranking
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Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 12 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
12 users
02 Jul. 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …
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Introduction to Quantum Dot Lab
- This resource has a 10.0 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 225 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
225 users
02 Jul. 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the Quantum Dot Lab simulator. A brief introduction to Quantum Dot Lab is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable …
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Introduction to Schred
- This resource has a 5.7 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 12 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
12 users
28 Jun. 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …
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MOSCNT: code for carbon nanotube transistor simulation
- This resource has a 10.0 Ranking
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Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 407 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
407 users
15 Nov. 2006 | Downloads | Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that …
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Optimization of Transistor Design for Carbon Nanotubes
- This resource has a 9.2 Ranking
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Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 153 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
153 users
21 Jan. 2006 | Online Presentations | Contributor(s): Jing Guo
We have developed a self-consistent atomistic simulator for CNTFETs. Using the simulator, we show that a recently reported high-performance CNTFET delivers a near ballistic on-current. The off-state, however, is significantly degraded because the CNTFET operates like a non-conventional Schottky …
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Theory of Ballistic Nanotransistors
- This resource has a 5.5 Ranking
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Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 0 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
27 Nov. 2002 | Publications | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to …
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Towards Multi-Scale Modeling of Carbon Nanotube Transistors
- This resource has a 10.0 Ranking
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Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 182 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
182 users
21 Sep. 2006 | Publications | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon …