Sending report ...Contributors: View
Gerhard Klimeck
| Contributions | 57 |
|---|---|
| Affiliation | Purdue University, West Lafayette |
| Web Site | http://dynamo.ecn.purdue.edu/~gekco/ |
| Biography | Gerhard Klimeck is the Associate Director for Technologies of the Network for Computational Nanotechnology at Purdue University and a Professor of Electrical and Computer Engineering since Dec. 2003. He guides http://nanoHUB.org which serves over 58,000 users worldwide with on-line simulation, tutorials, and seminars in the year 2007. He was the Technical Group Supervisor of the High Performance Computing Group and a Principal Scientist at the NASA Jet Propulsion Laboratory. Previously he was a member of technical staff at the Central Research Lab of Texas Instruments where he served as manager and principal architect of the Nanoelectronic Modeling (NEMO 1-D ) program. At JPL and Purdue Gerhard developed the Nanoelectronic Modeling tool (NEMO 3-D ) for multimillion atom simulations. His research interest is in the modeling of nanoelectronic devices, parallel cluster computing, and genetic algorithms. Dr. Klimeck received his Ph.D. in 1994 from Purdue University and his German electrical engineering degree in 1990 from Ruhr-University Bochum. Dr. Klimeck's work is documented in over 180 peer-reviewed publications and over 310 conference presentations. He is a senior member of IEEE and member of APS, HKN and TBP. NEMO 1-D was recently demonstrated to scale to 23,000 parallel processors and NEMO 3-D was demonstrated to scale to 8,1892 processors. More information about NEMO 1-D and NEMO 3-D can be found at their respective home pages. |
Contributions
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Atomistic Alloy Disorder in Nanostructures
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 39 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
26 Feb. 2007 | Online Presentations | Contributor(s): Gerhard Klimeck
Electronic structure and quantum transport simulations are typically performed in perfectly ordered semiconductor structures. Bands and modes are defined resulting in quantized conduction and discrete states. But what if the material is fundamentally disordered? What if the disorder is at the …
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Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 8 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Timothy Boykin
The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an s p3 s ∗ tight binding model. Two sources of broadening due to configuration and concentration disorder are identified. The concentrational disorder …
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I − Models and Benchmarks
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 18 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Ben Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of …
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 17 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in nanostructures …
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Bandstructure in Nanoelectronics
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 605 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
01 Nov. 2005 | Online Presentations | Contributor(s): Gerhard Klimeck
Electrical Engineering curricula typically only touch the bandstructure of solids early in the introduction of solid state devices. Critical parameters such as bandedges, effective masses and degeneracies are extracted from the bandstructure and the atomistic details of the origin of the abstract …
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Bandstructure Lab
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 877 Jobs: 6491 Avg. exec. time: 8 mins Reviews & Citations Google/IEEE: updated 05 Feb, 2008 Avg. Review: Citations: 3
19 May. 2006 | Tools | Contributor(s): Mathieu Luisier, Raseong Kim, Neophytos Neophytou, Michael McLennan, Jing Wang, Anisur Rahman, Gerhard Klimeck, Mark Lundstrom
Simulate electronic band structure for a variety of bulk materials and device geometries such as quantum wells and nanowires.
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BJT Lab
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 58 Jobs: 344 Avg. exec. time: 5 mins Reviews & Citations Google/IEEE Avg. Review: Citations: 0
20 Mar. 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck
Simulate bipolar junction transistors
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Carrier Statistics Lab
- This resource has a 9.5 Ranking
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 94 Jobs: 952 Avg. exec. time: 18 secs Reviews & Citations Google/IEEE Avg. Review: Citations: 0
22 Jan. 2008 | Tools | Contributor(s): Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck
Models Fermi and Maxwell-Boltzmann statistics for Silicon, Germanium, and GaAs
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CNTbands 2.0
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 544 Jobs: 5653 Avg. exec. time: 43 secs Reviews & Citations Google/IEEE: updated 23 May, 2007 Avg. Review: Citations: 1
14 Dec. 2006 | Tools | Contributor(s): Youngki Yoon, Diego Kienle, James K Fodor, Gengchiau Liang, Akira Matsudaira, Gerhard Klimeck, Jing Guo
CNTbands v2.0 can simulate electronic band structure and density-of-states for carbon nanotubes (CNTs) and carbon nanoribbons (CNRs). It also computes some basic parameters, such as nanotube diameter, number of hexagons in the unit cell, band gap, etc. Users may select the CNR structure to be …
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CNTFET Lab
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 414 Jobs: 12201 Avg. exec. time: 2 hours Reviews & Citations Google/IEEE: updated 06 Jul, 2007 Avg. Review: Citations: 4
09 Feb. 2007 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
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Coulomb Blockade Lab
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 29 Jobs: 121 Avg. exec. time: 1 secs Reviews & Citations Google/IEEE Avg. Review: Citations: 0
31 Mar. 2008 | Tools | Contributor(s): Xufeng Wang, Bhaskaran Muralidharan, Gerhard Klimeck
Simulation of non-linear current-voltage (I-V) characteristics through single and double quantum dots, to illustrate various single electron transport phenomena.
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Crystal Viewer
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 208 Jobs: 1052 Avg. exec. time: 2 secs Reviews & Citations Google/IEEE Avg. Review: Citations: 0
11 Jan. 2008 | Tools | Contributor(s): Abhijeet Paul, Gerhard Klimeck
Visualize different Bravais lattices, and crystal planes, and materials (diamond, Si, InAs, GaAs, graphene, buckyball)
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DEMONs
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 167 Jobs: 2124 Avg. exec. time: 54 secs Reviews & Citations Google/IEEE Avg. Review: Citations: 0
31 Oct. 2006 | Tools | Contributor(s): M. E. Klausmeier-Brown, C. M. Maziar, P. E. Dodd, M. A. Stettler, Xufeng Wang, Gerhard Klimeck
Monte Carlo analysis of 1D semiconductor devices
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Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 14 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Timothy Boykin
Material layers with a thickness of a few nanometers are common-place in today’s semiconductor devices. Before long, device fabrication methods will reach a point at which the other two device dimensions are scaled down to few tens of nanometers. The total atom count in such deca-nano devices is …
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Drift-Diffusion Lab
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 103 Jobs: 600 Avg. exec. time: 53 secs Reviews & Citations Google/IEEE Avg. Review: Citations: 0
04 Feb. 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck
Drift and Diffusion in a single semiconductor slab, subject to electric fields or external light sources
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Electron-Phonon and Electron-Electron Interactions in Quantum Transport
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 21 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck
The ob jective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device, the …
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Engineering at the nanometer scale: Is it a new material or a new device?
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 0 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
06 Nov. 2007 | Online Presentations | Contributor(s): Gerhard Klimeck
This seminar will overview NEMO 3D simulation capabilities and its deployment on the nanoHUB as well as an overview of the nanoHUB impact on the community.
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Ensemble Monte Carlo Method Described
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 4 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
28 Apr. 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry
In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR
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Examples for QuaMC 2D particle-based device Simulator Tool
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12 May. 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
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High Precision Quantum Control of Single Donor Spins in Silicon
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 14 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Rajib Rahman, marta prada, Gerhard Klimeck, Lloyd Hollenberg
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using tight-binding and band minima basis approaches and compared to the recent precision measurements. In contrast with previous effective mass-based …
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Homework Exercise on Bipolar Junction Transistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 6 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Mar. 2008 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Muhammad A. Alam, Gerhard Klimeck
The tutorial questions are based on the Bipolar Junction Transistor Lab v1.0 available online at Bipolar Junction Transistor Lab. Students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also a qualitative discussion is …
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Homework Exercise on Bravais Lattices, Crystal Structures, Miller Indices
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 51 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Mar. 2008 | Teaching Materials | Contributor(s): Abhijeet Paul, Gerhard Klimeck
The tutorial questions based on Crystal Viewer Lab v1.0 available online at Crystal Viewer Lab. Students are asked to explore different Bravais lattices, crystal structures, and Miller indices. Reference / course book: Semiconductor Device Fundamentals by Robert E. PierretNCN@Purdue
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Homework Exercise on Drift & Diffusion in Bulk Semiconductors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 33 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Mar. 2008 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
The tutorial questions based on Drift Diffusion Lab v1.0 available online at Drift Diffusion Lab. Students are asked to explore the concepts of Drift, Diffusion, Quasi Fermi Levels, and response to light.NCN@Purdue
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Homework Exercise on Fermi-Dirac and Maxwell-Boltzmann Distributions
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 17 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
24 Jan. 2008 | Teaching Materials | Contributor(s): Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck
The tutorial questions based on Carrier Statistics Lab v1.0 available online at Carrier Statistics Lab. Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study …
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Homework Exercise on Quantum Dot Spectra, Absorption, and State Symmetry
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 13 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Mar. 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck
The tutorial questions based on the Quantum Dot Lab v1.0 available online at Quantum Dot Lab. Students are asked to explore the various different quantum dot shapes, optimize the intra-band absorption through geometry variations, and the concepts of state symmetry and eigenstates. NCN@Purdue