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Contributors: View

Stephen M. Goodnick

Contributor picture

Contributions 4 (detailed usage)
Affiliation Arizona State University
Web Site http://www.asu.edu/aine/

Contributions

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  1. ACUTE

    This resource has a 5.7 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 01 Dec, 2008
    Users: 31
    Jobs: 184
    Avg. exec. time: 5 secs
    Reviews & Citations
    Google/IEEE
    Avg. Review: 0.0 out of 5 stars
    Citations: 0

    31 users, detailed statistics

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    25 Aug. 2008 | Tools | Contributor(s): Dragica Vasileska, Gerhard Klimeck, Xufeng Wang, Stephen M. Goodnick

    This tool is used for the Advanced Computational Electronics Tool Based Curricula

  2. Bulk Monte Carlo Lab

    This resource has a 5.6 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Overall Period: Updated 01 Dec, 2008
    Users: 33
    Jobs: 95
    Avg. exec. time: 4 mins
    Reviews & Citations
    Google/IEEE
    Avg. Review: 0.0 out of 5 stars
    Citations: 0

    33 users, detailed statistics

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    21 Aug. 2008 | Tools | Contributor(s): Dragica Vasileska, Mark Lundstrom, Gerhard Klimeck, Stephen M. Goodnick

    This tool calculates the bulk values of the carrier drift velocity, average electron energy and electron mobility given the electric field value in arbitrary crystalographic direction

  3. Computational Electronics

    This resource has a 10.0 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: updated 01 Nov, 2008
    Users: 138
    Reviews & Citations
    Google/IEEE
    Avg. Review: 5.0 out of 5 stars
    Citations: 0

    138 users

    1 review (Review this)

    0 citations

    11 Jul. 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck, Stephen M. Goodnick

    As semiconductor feature sizes shrink into the nanometer scale regime, device behavior becomes increasingly complicated as new physical phenomena at short dimensions occur, and limitations in material properties are reached. In addition to the problems related to the actual operation of ultra-small …

  4. Is dual gate device structure better from a thermal perspective?

    This resource has a 9.5 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: updated 01 Nov, 2008
    Users: 10
    Reviews & Citations
    Google/IEEE
    Avg. Review: 5.0 out of 5 stars
    Citations: 0

    10 users

    2 reviews (Review this)

    0 citations

    02 Sep. 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Stephen M. Goodnick

    This presentation illustrates several points. First, it is shown that in nanoscale devices there is less degradation due to heating effects due to non-stationary nature of the carrier transport (velocity overshoot) in the device, which, in turn, makes less probable the interaction with phonons. …

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