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Mark Lundstrom
| Contributions | 75 |
|---|---|
| Affiliation | Purdue University, West Lafayette |
| Web Site | http://dynamo.ecn.purdue.edu/%7Elundstro/ |
| Biography | Mark Lundstrom directs the National Science Foundations Network for Computational Nanotechnology (NCN) and is the Don and Carol Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University. He earned his bachelor's and master's degrees from the University of Minnesota in 1973 and 1974, respectively and joined the Purdue faculty upon completing his doctorate on the West Lafayette campus in 1980. Before attending Purdue, he worked at Hewlett-Packard Corporation on MOS process development and manufacturing. At Purdue, he has worked on solar cells, heterostructure devices, carrier transport physics, and his current research interests focus on the physics and technology of nanoscale devices. In the 1990s, Lundstrom co-founded (with his colleagues, Nirav Kapadia and Jos Fortes, the PUNCH project, which provided online simulation services for research and education in micro and nanoelectronics. That work led to the NCN, which now serves the nanotechnology community worldwide. He is the author of two books, Fundamentals of Carrier Transport (2nd Ed., Cambridge, 2000) and Nanoscale Transistors: Device Physics, Modeling, and Simulation (Springer, 2005). Lundstrom is a fellow of both the Institute of Electrical and Electronic Engineers (IEEE) and the American Physical Society and the recipient of several awards for his teaching and research, most recently Semiconductor Industry Associations 2005 University Researcher Award for his career contributions to the semiconductor industry. |
Contributions
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A Primer on Semiconductor Device Simulation
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 444 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
23 Jan. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Computer simulation is now an essential tool for semiconductor process and device research and development, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation for …
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A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 88 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
19 Oct. 2006 | Publications | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the …
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A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 66 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Oct. 2006 | Publications | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical …
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A Top-Down Introduction to the NEGF Approach
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 118 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
11 Jan. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
A Top-Down Introduction to the NEGF Approach
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An Electrical Engineering Perspective on Molecular Electronics
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 104 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
26 Oct. 2005 | Online Presentations | Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than 50 nm long, and billion transistor logic chips have arrived. Moore's Law continues, but the end of …
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Ballistic Nanotransistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 413 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
07 Dec. 2005 | Learning Modules | Contributor(s): Mark Lundstrom
This learning module is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. This learning module introduces the …
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Bandstructure Lab
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 877 Jobs: 6491 Avg. exec. time: 8 mins Reviews & Citations Google/IEEE: updated 05 Feb, 2008 Avg. Review: Citations: 3
19 May. 2006 | Tools | Contributor(s): Mathieu Luisier, Raseong Kim, Neophytos Neophytou, Michael McLennan, Jing Wang, Anisur Rahman, Gerhard Klimeck, Mark Lundstrom
Simulate electronic band structure for a variety of bulk materials and device geometries such as quantum wells and nanowires.
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Carrier Transport at the Nanoscale
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 0 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
27 Nov. 2007 | Courses | Contributor(s): Mark Lundstrom
This is a course about how charge flows in semiconductors with an emphasis on transport at the nanoscale. After a brief review basic concepts, the course consists of four parts. Part 1 focuses on ballistic (and quasi-ballistic) transport both semiclassical and quantum. Part 2 treats …
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CMOS Nanotechnology
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 344 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
25 May. 2005 | Online Presentations | Contributor(s): Mark Lundstrom
CMOS it the technology used for modern electronics. CMOS technology continues to advance because the number of transistors on a CMOS chip continues to double each technology generation. Device designers face many challenges as they scale (i.e. shrink) transistors in order to place more on a chip. …
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CNTFET Lab
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 414 Jobs: 12201 Avg. exec. time: 2 hours Reviews & Citations Google/IEEE: updated 06 Jul, 2007 Avg. Review: Citations: 4
09 Feb. 2007 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
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ECE 612 Introductory Lecture (Fall 06)
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 461 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
08 Aug. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 10: The Ballistic MOSFET
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 244 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
25 Sep. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 11: The Quasi-ballistic MOSFET
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 160 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
25 Sep. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 12: Subthreshold Conduction
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 202 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
25 Sep. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 204 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
16 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 14: Effective Mobility
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 207 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
02 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 15: 2D Electrostatics, Part I
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 206 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
02 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 16: 2D Electrostatics, Part II
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 185 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
02 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 17: Device Scaling
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 231 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
17 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 18: VT Engineering
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 166 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
17 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 19: Series Resistance
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 171 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
17 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 1: MOSFET Review
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 567 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
08 Aug. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 20: MOSFET Leakage
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 215 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 21: Gate resistance and Interconnects
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 178 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
02 Nov. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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ECE 612 Lecture 22: CMOS Process Steps
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 215 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
04 Jan. 2007 | Online Presentations | Contributor(s): Mark Lundstrom
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