Contributors: View
Mark Lundstrom

| Contributions | 76 (detailed usage) |
|---|---|
| Affiliation | Purdue University, West Lafayette |
| Web Site | http://dynamo.ecn.purdue.edu/%7Elundstro/ |
| Biography | Mark Lundstrom directs the National Science Foundations Network for Computational Nanotechnology (NCN) and is the Don and Carol Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University. He earned his bachelor's and master's degrees from the University of Minnesota in 1973 and 1974, respectively and joined the Purdue faculty upon completing his doctorate on the West Lafayette campus in 1980. Before attending Purdue, he worked at Hewlett-Packard Corporation on MOS process development and manufacturing. At Purdue, he has worked on solar cells, heterostructure devices, carrier transport physics, and his current research interests focus on the physics and technology of nanoscale devices. In the 1990s, Lundstrom co-founded (with his colleagues, Nirav Kapadia and Jos Fortes, the PUNCH project, which provided online simulation services for research and education in micro and nanoelectronics. That work led to the NCN, which now serves the nanotechnology community worldwide. He is the author of two books, Fundamentals of Carrier Transport (2nd Ed., Cambridge, 2000) and Nanoscale Transistors: Device Physics, Modeling, and Simulation (Springer, 2005). Lundstrom is a fellow of both the Institute of Electrical and Electronic Engineers (IEEE) and the American Physical Society and the recipient of several awards for his teaching and research, most recently Semiconductor Industry Associations 2005 University Researcher Award for his career contributions to the semiconductor industry. |
Contributions
-
A Primer on Semiconductor Device Simulation
- This resource has a 9.3 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 403 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
403 users
23 Jan. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Computer simulation is now an essential tool for semiconductor process and device research and development, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation for …
-
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
- This resource has a 8.2 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 79 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
79 users
19 Oct. 2006 | Publications | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the …
-
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
- This resource has a 7.7 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 66 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
66 users
30 Oct. 2006 | Publications | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical …
-
A Top-Down Introduction to the NEGF Approach
- This resource has a 8.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 111 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
111 users
11 Jan. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
A Top-Down Introduction to the NEGF Approach
-
An Electrical Engineering Perspective on Molecular Electronics
- This resource has a 7.8 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 89 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
89 users
26 Oct. 2005 | Online Presentations | Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than 50 nm long, and billion transistor logic chips have arrived. Moore's Law continues, but the end of …
-
Ballistic Nanotransistors
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 433 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
433 users
07 Dec. 2005 | Learning Modules | Contributor(s): Mark Lundstrom
This learning module is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. This learning module introduces the …
-
Bandstructure Lab
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Overall Period: Updated 19 Jul, 2008 Users: 1771 Jobs: 12091 Avg. exec. time: 8 mins Reviews & Citations Google/IEEE: updated 15 Apr, 2008 Avg. Review: Citations: 7
1771 users, detailed statistics
19 May. 2006 | Tools | Contributor(s): Mathieu Luisier, Raseong Kim, Neophytos Neophytou, Michael McLennan, Jing Wang, Anisur Rahman, Gerhard Klimeck, Mark Lundstrom
Simulate electronic band structure for a variety of bulk materials and device geometries such as quantum wells and nanowires.
-
Carrier Transport at the Nanoscale
- This resource has a 0.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 0 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
27 Nov. 2007 | Courses | Contributor(s): Mark Lundstrom
This is a course about how charge flows in semiconductors with an emphasis on transport at the nanoscale. After a brief review basic concepts, the course consists of four parts. Part 1 focuses on ballistic (and quasi-ballistic) transport both semiclassical and quantum. Part 2 treats …
-
CMOS Nanotechnology
- This resource has a 9.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 340 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
340 users
25 May. 2005 | Online Presentations | Contributor(s): Mark Lundstrom
CMOS it the technology used for modern electronics. CMOS technology continues to advance because the number of transistors on a CMOS chip continues to double each technology generation. Device designers face many challenges as they scale (i.e. shrink) transistors in order to place more on a chip. …
-
CNTFET Lab
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Overall Period: Updated 19 Jul, 2008 Users: 585 Jobs: 20853 Avg. exec. time: 45 mins Reviews & Citations Google/IEEE: updated 22 Apr, 2008 Avg. Review: Citations: 4
585 users, detailed statistics
09 Feb. 2007 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
-
ECE 612 Introductory Lecture (Fall 06)
- This resource has a 9.1 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 483 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
483 users
08 Aug. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 10: The Ballistic MOSFET
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 261 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
261 users
25 Sep. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 11: The Quasi-ballistic MOSFET
- This resource has a 9.6 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 167 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
167 users
25 Sep. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 12: Subthreshold Conduction
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 219 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
219 users
25 Sep. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 211 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
211 users
16 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 14: Effective Mobility
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 215 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
215 users
02 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 15: 2D Electrostatics, Part I
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 216 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
216 users
02 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 16: 2D Electrostatics, Part II
- This resource has a 9.5 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 191 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
191 users
02 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 17: Device Scaling
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 238 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
238 users
17 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 18: VT Engineering
- This resource has a 9.9 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 173 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
173 users
17 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 19: Series Resistance
- This resource has a 9.8 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 174 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
174 users
17 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 1: MOSFET Review
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 582 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
582 users
08 Aug. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 20: MOSFET Leakage
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 220 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
220 users
30 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 21: Gate resistance and Interconnects
- This resource has a 10.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 187 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
187 users
02 Nov. 2006 | Online Presentations | Contributor(s): Mark Lundstrom
…
-
ECE 612 Lecture 22: CMOS Process Steps
- This resource has a 9.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 225 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
225 users
04 Jan. 2007 | Online Presentations | Contributor(s): Mark Lundstrom
…