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Contributors: View

Mark Lundstrom

Contributor picture

Contributions 76 (detailed usage)
Affiliation Purdue University, West Lafayette
Web Site http://dynamo.ecn.purdue.edu/%7Elundstro/
Biography

Mark Lundstrom directs the National Science Foundations Network for Computational Nanotechnology (NCN) and is the Don and Carol Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University. He earned his bachelor's and master's degrees from the University of Minnesota in 1973 and 1974, respectively and joined the Purdue faculty upon completing his doctorate on the West Lafayette campus in 1980. Before attending Purdue, he worked at Hewlett-Packard Corporation on MOS process development and manufacturing. At Purdue, he has worked on solar cells, heterostructure devices, carrier transport physics, and his current research interests focus on the physics and technology of nanoscale devices. In the 1990s, Lundstrom co-founded (with his colleagues, Nirav Kapadia and Jos Fortes, the PUNCH project, which provided online simulation services for research and education in micro and nanoelectronics. That work led to the NCN, which now serves the nanotechnology community worldwide. He is the author of two books, Fundamentals of Carrier Transport (2nd Ed., Cambridge, 2000) and Nanoscale Transistors: Device Physics, Modeling, and Simulation (Springer, 2005). Lundstrom is a fellow of both the Institute of Electrical and Electronic Engineers (IEEE) and the American Physical Society and the recipient of several awards for his teaching and research, most recently Semiconductor Industry Associations 2005 University Researcher Award for his career contributions to the semiconductor industry.

Contributions

  1. A Primer on Semiconductor Device Simulation

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    23 Jan. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    Computer simulation is now an essential tool for semiconductor process and device research and development, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation for …

  2. A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

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    19 Oct. 2006 | Publications | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the …

  3. A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

    This resource has a 7.7 Ranking

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    30 Oct. 2006 | Publications | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom

    The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical …

  4. A Top-Down Introduction to the NEGF Approach

    This resource has a 8.0 Ranking

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    Last 12 Months: updated 01 Jul, 2008
    Users: 111
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    11 Jan. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    A Top-Down Introduction to the NEGF Approach

  5. An Electrical Engineering Perspective on Molecular Electronics

    This resource has a 7.8 Ranking

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    Last 12 Months: updated 01 Jul, 2008
    Users: 89
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    26 Oct. 2005 | Online Presentations | Contributor(s): Mark Lundstrom

    After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than 50 nm long, and billion transistor logic chips have arrived. Moore's Law continues, but the end of …

  6. Ballistic Nanotransistors

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    Last 12 Months: updated 01 Jul, 2008
    Users: 433
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    07 Dec. 2005 | Learning Modules | Contributor(s): Mark Lundstrom

    This learning module is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. This learning module introduces the …

  7. Bandstructure Lab

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    Overall Period: Updated 19 Jul, 2008
    Users: 1771
    Jobs: 12091
    Avg. exec. time: 8 mins
    Reviews & Citations
    Google/IEEE: updated 15 Apr, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 7

    1771 users, detailed statistics

    3 reviews (Review this)

    7 citations

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    19 May. 2006 | Tools | Contributor(s): Mathieu Luisier, Raseong Kim, Neophytos Neophytou, Michael McLennan, Jing Wang, Anisur Rahman, Gerhard Klimeck, Mark Lundstrom

    Simulate electronic band structure for a variety of bulk materials and device geometries such as quantum wells and nanowires.

  8. Carrier Transport at the Nanoscale

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    27 Nov. 2007 | Courses | Contributor(s): Mark Lundstrom

    This is a course about how charge flows in semiconductors with an emphasis on transport at the nanoscale. After a brief review basic concepts, the course consists of four parts. Part 1 focuses on ballistic (and quasi-ballistic) transport both semiclassical and quantum. Part 2 treats …

  9. CMOS Nanotechnology

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    Last 12 Months: updated 01 Jul, 2008
    Users: 340
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    Avg. Review: 4.5 out of 5 stars
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    340 users

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    25 May. 2005 | Online Presentations | Contributor(s): Mark Lundstrom

    CMOS it the technology used for modern electronics. CMOS technology continues to advance because the number of transistors on a CMOS chip continues to double each technology generation. Device designers face many challenges as they scale (i.e. shrink) transistors in order to place more on a chip. …

  10. CNTFET Lab

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    Usage Stats
    Overall Period: Updated 19 Jul, 2008
    Users: 585
    Jobs: 20853
    Avg. exec. time: 45 mins
    Reviews & Citations
    Google/IEEE: updated 22 Apr, 2008
    Avg. Review: 5.0 out of 5 stars
    Citations: 4

    585 users, detailed statistics

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    4 citations

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    09 Feb. 2007 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom

    Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices

  11. ECE 612 Introductory Lecture (Fall 06)

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    Last 12 Months: updated 01 Jul, 2008
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    483 users

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    08 Aug. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  12. ECE 612 Lecture 10: The Ballistic MOSFET

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    Last 12 Months: updated 01 Jul, 2008
    Users: 261
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    261 users

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    25 Sep. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  13. ECE 612 Lecture 11: The Quasi-ballistic MOSFET

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    25 Sep. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  14. ECE 612 Lecture 12: Subthreshold Conduction

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    25 Sep. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  15. ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances

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    16 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  16. ECE 612 Lecture 14: Effective Mobility

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    02 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  17. ECE 612 Lecture 15: 2D Electrostatics, Part I

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    02 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  18. ECE 612 Lecture 16: 2D Electrostatics, Part II

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    Last 12 Months: updated 01 Jul, 2008
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    02 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  19. ECE 612 Lecture 17: Device Scaling

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    17 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  20. ECE 612 Lecture 18: VT Engineering

    This resource has a 9.9 Ranking

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    17 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  21. ECE 612 Lecture 19: Series Resistance

    This resource has a 9.8 Ranking

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    17 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  22. ECE 612 Lecture 1: MOSFET Review

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    08 Aug. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  23. ECE 612 Lecture 20: MOSFET Leakage

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    30 Oct. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  24. ECE 612 Lecture 21: Gate resistance and Interconnects

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    02 Nov. 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  25. ECE 612 Lecture 22: CMOS Process Steps

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    04 Jan. 2007 | Online Presentations | Contributor(s): Mark Lundstrom