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Muhammad A. Alam
| Contributions | 16 (detailed usage) |
|---|---|
| Affiliation | Purdue University, West Lafayette |
| Web Site | http://dynamo.ecn.purdue.edu/~alam/ |
| Biography | Professor Alam joined Purdue University as a faculty member of the Electrical and Computer Engineering Department in 2004 after spending nearly a decade in industry, first at Bell Labs and then at Agere Systems. His research interest involves physics of carrier transport in semiconductor devices, and he has worked on theory of electron transport models, quasi-ballistic transport in bipolar transistors, MOCVD and ALD crystal growth, laser dynamics, and most recent recently, on the theory of oxide reliability, transport in nanocomposite materials, and response of Nano-Bio sensors. |
Contributions
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2008 NCN@Purdue Summer School: "Electronics from the Bottom Up"
- This resource has a 6.8 Ranking
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 103 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
103 users
26 Aug. 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two …
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BioSensorLab
- This resource has a 7.6 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Overall Period: Updated 10 Oct, 2008 Users: 126 Jobs: 515 Avg. exec. time: 13 secs Reviews & Citations Google/IEEE Avg. Review: Citations: 0
126 users, detailed statistics
28 Mar. 2008 | Tools | Contributor(s): Pradeep R. Nair, Muhammad A. Alam
BioSensorLab is a tool to evaluate and predict the performance of biosensors.
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Computational Modeling: Experience from my Bell Lab Days
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 109 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
109 users
19 Dec. 2007 | Online Presentations | Contributor(s): Muhammad A. Alam
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
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Device Reliability Tool
- This resource has a 6.3 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Overall Period: Updated 10 Oct, 2008 Users: 194 Jobs: 784 Avg. exec. time: 56 secs Reviews & Citations Google/IEEE: updated 05 Feb, 2008 Avg. Review: Citations: 1
194 users, detailed statistics
28 Aug. 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam
Analyzes MOS device reliability based on Negative Bias Temperature Instability (NBTI).
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Electronics from the Bottom Up: an educational initiative on 21st century electronics
- This resource has a 9.4 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 242 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
242 users
17 Aug. 2007 | Online Presentations | Contributor(s): Mark Lundstrom, Supriyo Datta, Muhammad A. Alam
In the 1960s, a group of leaders from industry and academia, recognized that the age of vacuum tubes was ending and that engineers would have to be educated differently if they were to realize the opportunities that the new field of microelectronics presented. The Semiconductor …
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Electronics From the Bottom Up: top-down/bottom-up views of length
- This resource has a 7.7 Ranking
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 111 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
111 users
17 Aug. 2007 | Online Presentations | Contributor(s): Muhammad A. Alam
When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFETs threshold voltage and gate oxides breakdown is a random process. Even a concept as simple as channel length becomes uncertain. This short (20 min) talk, a …
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Geometry of Diffusion and the Performance Limits of Nanobiosensors
- This resource has a 10.0 Ranking
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 381 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
381 users
05 Dec. 2006 | Online Presentations | Contributor(s): Muhammad A. Alam, Pradeep R. Nair
Modern methods of detection of biomolecules for differential genome sequencing, protein recognition, etc. rely on variety of chemical and optical methods to signal the conjugation of target biomolecules with corresponding capture probes. Although these classical methods are widely used, extremely …
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Homework Exercise on Bipolar Junction Transistors
- This resource has a 10.0 Ranking
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 132 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
132 users
30 Mar. 2008 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Muhammad A. Alam, Gerhard Klimeck
The tutorial questions are based on the Bipolar Junction Transistor Lab v1.0 available online at Bipolar Junction Transistor Lab. Students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also a qualitative discussion is …
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Homework for Monte Carlo Method: High field transport in Bulk Si
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 95 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
95 users
06 Jan. 2006 | Teaching Materials | Contributor(s): Muhammad A. Alam
This homework assignment is part of ECE 656 "Electronic Transport in Semiconductors" (Purdue University). It contains 10 problems which lead students through the simulation of high-field transport in bulk silicon.
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Homework for PN Junctions: Depletion Approximation (ECE 606)
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 243 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
243 users
09 Jan. 2006 | Teaching Materials | Contributor(s): Muhammad A. Alam
This homework assignment is part of ECE 606 "Solid State Devices" (Purdue University). It contains 5 problems which lead students through a comparison of the depletion approximation and an exact solution of PN junction diodes. Students compute the exact solution by using the PN Junction Lab …
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Introductory Comments
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 0 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
29 Sep. 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
…
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Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
- This resource has a 5.4 Ranking
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 18 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
18 users
01 Jul. 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam
Mobility degradation due to generation of interface traps, Δμeff(NIT), is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there is a general perception that Δμeff(NIT) is relatively insignificant (compared to Δμeff due to …
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NanoNET
- This resource has a 5.6 Ranking
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Usage Stats Overall Period: Updated 10 Oct, 2008 Users: 338 Jobs: 1831 Avg. exec. time: 14 mins Reviews & Citations Google/IEEE: updated 22 Apr, 2008 Avg. Review: Citations: 3
338 users, detailed statistics
17 Jan. 2007 | Tools | Contributor(s): Ninad Pimparkar, Satish Kumar, Jayathi Murthy, Muhammad A. Alam
NanoNET is a tool to simulate the Nanobundle Network Thin Film Transistors (NB-TFTs). Random networks of carbon nanotubes with thousands of tubes and random orientation can be simulated using this tool. The final answer can be compactly formulated in the formula shown in the picture. Here ID is …
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On the Reliability of Micro-Electronic Devices: An Introductory Lecture on Negative Bias Temperature Instability
- This resource has a 9.3 Ranking
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 371 Reviews & Citations Google/IEEE: updated 22 May, 2007 Avg. Review: Citations: 1
371 users
03 Oct. 2005 | Online Presentations | Contributor(s): Muhammad A. Alam
In 1930s Bell Labs scientists chose to focus on Siand Ge, rather than better known semiconductors like Ag2S and Cu2S, mostly because of their reliable performance. Their choice was rewarded with the invention of bipolar transistors several years later. In 1960s, scientists at Fairchild worked hard …
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Reliability Physics of Nanoscale Transistors
- This resource has a 0.3 Ranking
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 7 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
7 users
27 Nov. 2007 | Courses | Contributor(s): Muhammad A. Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, we learn how to compute current through a device when a voltage is applied. However, as transistors are turned on and off trillions of times during the years of the …
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The Long and Short of Pick-up Stick Transistors: A Promising Technology for Nano- and Macro-Electronics
- This resource has a 9.8 Ranking
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 232 Reviews & Citations Google/IEEE: updated 06 Feb, 2008 Avg. Review: Citations: 2
232 users
11 Apr. 2006 | Online Presentations | Contributor(s): Muhammad A. Alam
In recent years, there has been enormous interest in fabricating thin-film transistors on flexible substrates in the emerging field of large-area macro-electronics. Applications include displays, e- paper, e-clothing, pressure-sensitive skin, large-area chemical and biological sensors, flexible …