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Contributors: View

Neerav Kharche

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Contributions 3 (detailed usage)
Affiliation Purdue University, West Lafayette

Contributions

  1. Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I − Models and Benchmarks

    This resource has a 8.9 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

    Usage Stats
    Last 12 Months: updated 01 Oct, 2008
    Users: 56
    Reviews & Citations
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    Avg. Review: 5.0 out of 5 stars
    Citations: 0

    56 users

    1 review (Review this)

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    14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Ben Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin

    Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of …

  2. Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications

    This resource has a 8.7 Ranking

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    Usage Stats
    Last 12 Months: updated 01 Oct, 2008
    Users: 37
    Reviews & Citations
    Google/IEEE
    Avg. Review: 5.0 out of 5 stars
    Citations: 0

    37 users

    1 review (Review this)

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    14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin

    In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in nanostructures …

  3. Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder

    This resource has a 5.2 Ranking

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    Usage Stats
    Last 12 Months: updated 01 Oct, 2008
    Users: 12
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    Avg. Review: 0.0 out of 5 stars
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    12 users

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    14 Jan. 2008 | Publications | Contributor(s): Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck

    Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, while calculations of perfectly ordered structures underestimate experimentally observed VS. Step …