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Jing Wang
| Contributions | 6 |
|---|---|
| Affiliation | Purdue University, West Lafayette |
| Biography | Jing Wang was born in Henan Province, China, in 1979. In 2001, he obtained the Bachelor of Engineering degree with the highest honor from the Department of Electronic Engineering at Tsinghua University, Beijing, China. In the same year, he started his Ph.D. study at the School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana. Jing Wang's Ph.D. research, advised by Prof. Mark Lundstrom, covered device physics and simulation of silicon nanowire transistors, exploration of nanoscale MOSFETs, and simulation of high electron mobility transistors (HEMTs). In August 2005, Jing Wang was awarded the Ph.D. degree by Purdue University, and in September 2005, he joined the IBM Semiconductor Research and Development Center (SRDC), Hopewell Junction, New York, as a device modeling engineer. |
Contributions
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A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 66 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Oct. 2006 | Publications | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical …
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Bandstructure Lab
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 877 Jobs: 6491 Avg. exec. time: 8 mins Reviews & Citations Google/IEEE: updated 05 Feb, 2008 Avg. Review: Citations: 3
19 May. 2006 | Tools | Contributor(s): Mathieu Luisier, Raseong Kim, Neophytos Neophytou, Michael McLennan, Jing Wang, Anisur Rahman, Gerhard Klimeck, Mark Lundstrom
Simulate electronic band structure for a variety of bulk materials and device geometries such as quantum wells and nanowires.
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Device Physics and Simulation of Silicon Nanowire Transistors
- This resource has a 9.9 Ranking
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 222 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
20 May. 2006 | Publications | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry …
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Device Physics and Simulation of Silicon Nanowire Transistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 0 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
28 Sep. 2006 | Publications | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor …
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FETToy
- This resource has a 9.5 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 482 Jobs: 5907 Avg. exec. time: 5 secs Reviews & Citations Google/IEEE: updated 28 Apr, 2008 Avg. Review: Citations: 11
14 Feb. 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Toy model to simulate I-V characteristics of nanoscale double gate MOSFETs
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NanoWire
- This resource has a 9.9 Ranking
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 467 Jobs: 7487 Avg. exec. time: 11 hours Reviews & Citations Google/IEEE: updated 08 Feb, 2008 Avg. Review: Citations: 2
19 May. 2006 | Tools | Contributor(s): Jing Wang, Eric Polizzi, Clemens Heitzinger, Gerhard Klimeck, Saumitra Raj Mehrotra, Ben Haley
Simulate electron transport in 3D through nanowires in the effective mass approximation subject to 3D Poisson solution