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Sebastien Goasguen
| Contributions | 6 |
|---|---|
| Affiliation | Purdue University, West Lafayette |
| Biography | Sebastien Goasguen received a B.S. Degree from the Polytechnic University of
Toulouse, France in 1997, a M.S. Degree in Electronics research with
distinction from King's College London, England in 1998 and the Ph.D. degree
in Electrical Engineering from Arizona State university in 2001.
Since summer 2001 he has been at Purdue University, first as a post-doctorate student in computational nanoelectronics, then as a visiting professor and Acting Technical Director of the NSF Network for Computational Nanotechnology (NCN) where he lead the nanoHUB effort till 2003. In 2004 he joined the Rosen Center for Advanced Computing (RCAC) as a research scientist and TeraGrid Site Lead. He is now a senior research scientist and director of the science gateway group at RCAC where he leads the TeraGrid project, the Tier-2 CMS project and the nanoHUB middleware effort. His research interests have gone from computational electromagnetics to nanoelectronics and now focus on middleware technologies, grid tools, security models for distributed systems and virtualization. |
Contributions
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A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
- This resource has a 8.2 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 May, 2008 Users: 88 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
19 Oct. 2006 | Publications | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the …
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nanoMOS
- This resource has a 9.6 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 367 Jobs: 2636 Avg. exec. time: 22 mins Reviews & Citations Google/IEEE: updated 25 Apr, 2008 Avg. Review: Citations: 42
19 May. 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Mark Lundstrom
2D simulator for thin body MOSFETs, with transport models ranging from drift-diffusion to quantum diffusive.
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nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
- This resource has a 8.7 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 May, 2008 Users: 109 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
06 Oct. 2006 | Publications | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space …
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NanoMOS 2.5 Source Code Download
- This resource has a 8.1 Ranking
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 0 Reviews & Citations Google/IEEE: updated 17 May, 2007 Avg. Review: Citations: 1
22 Feb. 2005 | Downloads | Contributor(s): Zhibin Ren, Sebastien Goasguen
NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the …
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Simulating Electronic Conduction Through the NanoHub
- This resource has a 5.1 Ranking
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 10 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
16 Feb. 2005 | Online Presentations | Contributor(s): Sebastien Goasguen
Simulating Electronic Conduction Through the nanoHUB
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The nanoHUB Science Gateway
- This resource has a 5.4 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 May, 2008 Users: 17 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
12 Mar. 2006 | Online Presentations | Contributor(s): Sebastien Goasguen
The TeraGrid Science Gateways program was initiated to expand the influence of TeraGrid resources through back-end integration into community developed portals and desktop applications. Nancy Wilkins-Diehr, SDSC, TeraGrid Area Director for Science Gateways will give a brief overview of the program. …