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Anisur Rahman
| Contributions | 4 |
|---|---|
| Affiliation | Purdue University, West Lafayette |
| Biography | Anisur Rahman received his BSc in Electrical Engineering in 1997 from Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh. After that, he joined the Department of EEE at BUET and worked for two years as a lecturer. From fall 1999, he pursued a direct PhD program in Electrical Engineering at Purdue University, West Lafayette, IN, which he finished in 2005. Since September 2005, he has been working in the Front End Quality and Reliability group at Intel Corp., Hillsboro, OR. |
Contributions
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Bandstructure Lab
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Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 877 Jobs: 6491 Avg. exec. time: 8 mins Reviews & Citations Google/IEEE: updated 05 Feb, 2008 Avg. Review: Citations: 3
19 May. 2006 | Tools | Contributor(s): Mathieu Luisier, Raseong Kim, Neophytos Neophytou, Michael McLennan, Jing Wang, Anisur Rahman, Gerhard Klimeck, Mark Lundstrom
Simulate electronic band structure for a variety of bulk materials and device geometries such as quantum wells and nanowires.
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Exploring New Channel Materials for Nanoscale CMOS
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 180 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
21 May. 2006 | Publications | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-k dielectrics, and …
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FETToy
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: Updated 16 May, 2008 more › Users: 482 Jobs: 5907 Avg. exec. time: 5 secs Reviews & Citations Google/IEEE: updated 28 Apr, 2008 Avg. Review: Citations: 11
14 Feb. 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Toy model to simulate I-V characteristics of nanoscale double gate MOSFETs
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Theory of Ballistic Nanotransistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 2 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
27 Nov. 2002 | Publications | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to …