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marta prada
| Contributions | 4 (detailed usage) |
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| Affiliation | Purdue University, West Lafayette |
Contributions
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I − Models and Benchmarks
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 56 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
56 users
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Ben Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of …
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications
- This resource has a 8.8 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 37 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
37 users
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in nanostructures …
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High Precision Quantum Control of Single Donor Spins in Silicon
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Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 2 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
2 users
14 Jan. 2008 | Publications | Contributor(s): Rajib Rahman, marta prada, Gerhard Klimeck, Lloyd Hollenberg
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using tight-binding and band minima basis approaches and compared to the recent precision measurements. In contrast with previous effective mass-based …
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Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder
- This resource has a 5.2 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 12 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
12 users
14 Jan. 2008 | Publications | Contributor(s): Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck
Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, while calculations of perfectly ordered structures underestimate experimentally observed VS. Step …