| Description: |
Future field effect transistors will be on the same length scales as "esoteric" devices such as quantum dots,
nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those structures the behavior of
carriers and their interaction with their environment need to be fundamentally explained at a quantum
mechanical level. Modeling efforts that are targeted to enhance the theoretical understanding of these
devices are underway worldwide. Most of these device level descriptions utilize an effective mass
approach which ignores any details of the atomic granularity. However, the concepts of device and
material meet at the nanometer scale. The new device is really a new material and vice versa. A
representation of the constituent materials at the atomic resolution is needed to quantitatively model
devices with a countable number of atoms. While atomistic representations are novel to device physicists,
the concept of finite devices that are not infinitely periodic is novel in the semiconductor materials
modeling community. This presentation will provide a perspective of the NEMO 1-D and NEMO 3-D tool
developments, their scaling on advanced computational resources up to 23,000 processors, their impact on
the understanding of nanoelectronic devices, and the need for continued algorithm work. |
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