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| nano501:Simulating with PETE: Purdue Exploratory Technology Evaluator | |
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| Description: | Arijit Raychowdhury Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of I-V and C-V tables. The Benchmark circuits include minimum sized inverter, nand chain, norchain, 8-bit Full Adder, Ring Oscillator and Cascaded inverters driving a big load capacitance. Further, one can perform DC simulations on inverters and obtain voltage transfer characteristics (VTCs) and noise margin/ gain from the VTC. In this tutorial we will discuss how to use PETE for evaluating exploratory nano devices. We will further discuss the algorithms used, the interface and some caveats while using the tool. |
| When: |
Monday, September 17 2007, 2:30pm - 3:30pm |
| Where: | EE317 |
| Website: | http://www.nanoHUB.org/education/nanotechnology501 |
| Submitted by: Cheryl E. Haines | |