Online Simulation

And More

Top 25 Tags (all tags)

  1. algorithms
  2. aqme
  3. carbon nanotubes
  4. course lecture
  5. cyberinfrastructure
  6. devices
  7. education/outreach
  8. experiments
  9. material science
  10. molecular electronics
  11. nano/bio
  12. nanobio applications
  13. nano electro-mechanical systems
  14. nanoelectronics
  15. nanomedicine
  16. nanophotonics
  17. nano-transistors
  18. nanowires
  19. NEGF
  20. quantum dots
  21. quantum transport
  22. research seminar
  23. transistors
  24. tutorial
  25. uIllinois

Other

Trouble Report

For immediate assistance browse through our support center. You can find answers to many questions in just a few minutes.

If still experiencing problems, send us a report.

Sending report ...

Support Center

Open Question

transfer characteristic

how the transfer characteristic of a mosfet depends on the channel doping?(theory)

Tags:

Asked by Anonymous - 1 year ago - 1 response

Answer this question

Status: Accepting answers 0 Good question Report abuse  

Answers (1)

  • Posted on 01 January, 2008 by Mark Lundstrom

      0     0   Login to vote If by "transfer characteristic" you mean Ids vs. Vgs at a fixed Vds, then...

    for an n-channel MOSFET, increasing the channel doping will increase the threshold voltage, VT, which shifts the Id vs. Vgs characteristic to the right,

    Decreasing the channel doping would do the opposite.

    You may want to have a look at Lectures 7, 8, and 9 in "Nanoscale Transistors"
    https://www.nanohub.org/courses/nanoscale_transistors

    reply | report abuse